Performance improvement of IF(CN2)2 meta based N-channel OTFTs and their integration into a stable CMOS inverter

S. Bebiche; I. Bouhadda; T. Mohammed-Brahim; N. Coulon; Jean-François Bergamini; Cyril Poriel; E. Jacques

doi:10.1016/j.sse.2017.01.009

Journal articles

Performance improvement of IF(CN2)2 meta based N-channel OTFTs and their integration into a stable CMOS inverter

S. Bebiche ^{1, *} I. Bouhadda ¹ T. Mohammed-Brahim ¹ N. Coulon ¹ Jean-François Bergamini ² Cyril Poriel ² E. Jacques ¹

* Corresponding author

1 IETR - Institut d'Électronique et des Technologies du numéRique

2 ISCR - Institut des Sciences Chimiques de Rennes

Keywords : Field-effect mobilities Indenofluorene Organic electronics Output voltage swings Peak-to-peak magnitude CMOS integrated circuits Evaporation conditions Electrical stability CMOS inverters Temperature Single crystals Molecules Evaporation Deposition rates Deposition Computer circuits

Document type :

Journal articles

Domain :

Computer Science [cs] / Networking and Internet Architecture [cs.NI]

Engineering Sciences [physics] / Electronics

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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01484527
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Submitted on : Tuesday, July 4, 2017 - 11:25:25 AM
Last modification on : Wednesday, April 7, 2021 - 3:18:09 PM
Long-term archiving on: : Friday, December 15, 2017 - 12:09:50 AM

Performance improvement of IF(CN2)2 meta based N-channel OTFTs and their integration into a stable CMOS inverter

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Performance improvement of IF(CN2)2 meta based N-channel OTFTs and their integration into a stable CMOS inverter

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