Performance improvement of IF(CN2)2 meta based N-channel OTFTs and their integration into a stable CMOS inverter

S. Bebiche (1) , I. Bouhadda (1) , T. Mohammed-Brahim (1) , N. Coulon (1) , Jean-Francois Bergamini (2) , Cyril Poriel (2) , Emmanuel Jacques (1)

1 IETR - Institut d'Électronique et des Technologies du numéRique
2 ISCR - Institut des Sciences Chimiques de Rennes

Keywords: Computer circuits; Deposition; Deposition rates; Evaporation; Molecules; Single crystals; Temperature; CMOS inverters; Electrical stability; Evaporation conditions; Field-effect mobilities; Indenofluorene; Organic electronics; Output voltage swings; Peak-to-peak magnitude; CMOS integrated circuits

Domains: Computer Science [cs]; Networking and Internet Architecture [cs.NI]; Engineering Sciences [physics]; Electronics

S. Bebiche, I. Bouhadda, T. Mohammed-Brahim, N. Coulon, Jean-Francois Bergamini, et al.. Performance improvement of IF(CN2)2 meta based N-channel OTFTs and their integration into a stable CMOS inverter. Solid-State Electronics, 2017, 130, pp.49--56. ⟨10.1016/j.sse.2017.01.009⟩. ⟨hal-01484527⟩