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Effect of Rare-Earth Doping on Free-Volume Nanostructure of Ga-Codoped Glassy (As/Sb)2Se3

Abstract : Subsequent stages of atomic-deficient nanostructurization finalizing rare-earth functionality under Pr-doping in Ga(AsSbSe) glass are studied employing method of positron annihilation lifetime spectroscopy. Genesis of free-volume positron trapping sites, composed of atomic-accessible geometrical holes (void cores) arrested by surrounding atomic-inaccessible Se-based bond-free solid angles (void shells), are disclosed for parent AsSe, Ga-codoped Ga(AsSe), as well as Ga-codoped and Sb-modified Ga(AsSbSe) glasses. The finalizing nanostructurization due to Pr-doping (500 wppm) in glassy Ga(AsSbSe) is explained in terms of competitive contribution of changed occupancy sites available for both rare-earth ions and positrons.
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01501265
Contributor : Laurent Jonchère <>
Submitted on : Tuesday, April 4, 2017 - 9:41:20 AM
Last modification on : Thursday, March 5, 2020 - 2:07:09 PM

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Yaroslav Shpotyuk. Effect of Rare-Earth Doping on Free-Volume Nanostructure of Ga-Codoped Glassy (As/Sb)2Se3. Nanoscale Research Letters, SpringerOpen, 2017, 12 (1), pp.191. ⟨10.1186/s11671-017-1959-2⟩. ⟨hal-01501265⟩

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