A. Sedhain, N. Nepal, M. L. Nakarmi, T. M. Al-tahtamouni, J. Y. Lin et al., Photoluminescence properties of AlN homoepilayers with different orientations, Applied Physics Letters, vol.93, issue.4, pp.93-041905, 2008.
DOI : 10.1063/1.1765208

G. Radhakrishnan, Properties of AlN films grown at 350 K by gas???phase excimer laser photolysis, Journal of Applied Physics, vol.167, issue.10, pp.78-6000, 1995.
DOI : 10.1557/PROC-167-229

C. Duquenne, M. P. Besland, P. Y. Tessier, E. Gautron, Y. Scudeller et al., Thermal conductivity of aluminium nitride thin films prepared by reactive magnetron sputtering, Journal of Physics D: Applied Physics, vol.45, issue.1, pp.45-015301, 2012.
DOI : 10.1088/0022-3727/45/1/015301
URL : https://hal.archives-ouvertes.fr/hal-00866344

Y. Taniyasu, M. Kasu, and N. Kobayashi, Intentional control of n-type conduction for Sidoped AlN and AlXGa1-XN (0.42 ? x < 1), Applied Physics Letters, pp.81-1255, 2002.

Y. Taniyasu, M. Kasu, and T. Makimoto, Electrical conduction properties of n-type Si-doped AlN with high electron mobility (> 100cm 2 V -1 s -1 ), Applied Physics Letters, pp.85-4672, 2004.

Y. Taniyasu, M. Kasu, and T. Makimoto, Increased electron mobility in n-type Si-doped AlN by reducing dislocation density, Applied Physics Letters, vol.7, issue.18, pp.89-182112, 2006.
DOI : 10.1002/pssb.19660160264

H. Hirayama, Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes, Journal of Applied Physics, vol.201, issue.9, pp.97-091101, 2005.
DOI : 10.1002/pssa.200405120

A. Khan, K. Balakrishnan, and T. Katona, Ultraviolet light-emitting diodes based on group three nitrides, Nature Photonics, vol.84, issue.1, pp.77-84, 2008.
DOI : 10.1063/1.1528726

W. Lei, D. Liu, J. Zhang, B. Liu, P. Zhu et al., AlN nanostructures: tunable architectures and optical properties, Chemical Communications, vol.86, issue.11, pp.1365-1367, 2009.
DOI : 10.1039/b815862b

L. Trinkler, B. Berzina, D. Kasjan, and L. C. Chen, Luminescence properties of AlN nanostructures revealed under UV light irradiation, Journal of Physics: Conference Series, vol.93, pp.93-012040, 2007.
DOI : 10.1088/1742-6596/93/1/012040

S. L. Yang, R. S. Gao, P. L. Niu, Z. Y. Zou, and R. H. Yu, Arc Discharge Synthesis and Photoluminescence of 3D Feather-like AlN Nanostructures, Nanoscale Research Letters, vol.213, issue.12, 2011.
DOI : 10.1007/s11671-010-9745-4
URL : http://doi.org/10.1007/s11671-010-9745-4

X. H. Ji, Q. Y. Zhang, S. P. Lau, H. X. Jiang, and J. Y. Lin, Temperature-dependent photoluminescence and electron field emission properties of AlN nanotip arrays, Applied Physics Letters, vol.94, issue.17, pp.94-173106, 2009.
DOI : 10.1016/S0008-6223(03)00414-7

Y. Tamura and K. Hane, AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy, Nanoscale Research Letters, vol.378, issue.202, pp.1-5, 2015.
DOI : 10.1016/j.jcrysgro.2012.12.080
URL : http://doi.org/10.1186/s11671-015-1178-7

L. L. Kechouane, E. Brizoual, N. Faulques, M. A. Barreau, and . Djouadi, Structural and photoluminescence characterization of vertically aligned multiwalled carbon nanotubes coated with ZnO by magnetron sputtering, Thin Solid Films, pp.520-4816, 2012.
URL : https://hal.archives-ouvertes.fr/hal-00866201

T. Djouadi and . Brousse, Hierarchical nanocomposite electrodes based on titanium nitride and carbon nanotubes for micro-supercapacitors, Nano Energy, vol.7, pp.104-113, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01521867

A. Achour, A. A. Mel, N. Bouts, E. Gautron, E. Grigore et al., Carbon nanotube growth at 420?C using nickel/carbon composite thin films as catalyst supports, Diamond and Related Materials, pp.34-76, 2013.
DOI : 10.1016/j.diamond.2013.02.006
URL : https://hal.archives-ouvertes.fr/hal-00951866

D. Blazei, Thermal inteface materials, Electronic Cooling, pp.14-20, 2003.

L. S. Chuah, Z. Hassan, and H. Hassan, (111), Surface Review and Letters, vol.16, issue.01, pp.16-99, 2009.
DOI : 10.1116/1.581321
URL : https://hal.archives-ouvertes.fr/jpa-00228133

H. Cheng, Y. Sun, J. X. Zhang, Y. B. Zhang, S. Yuan et al., AlN films deposited under various nitrogen concentrations by RF reactive sputtering, Journal of Crystal Growth, vol.254, issue.1-2, pp.254-300, 2003.
DOI : 10.1016/S0022-0248(03)01176-X

M. Ishihara, S. J. Li, H. Yumoto, K. Akashi, and Y. Ide, Control of preferential orientation of AlN films prepared by the reactive sputtering method, Thin Solid Films, vol.316, issue.1-2, pp.316-152, 1998.
DOI : 10.1016/S0040-6090(98)00406-4

S. Khamseh, M. Nose, T. Kawabata, A. Saiki, K. Matsuda et al., Effect of Deposition Conditions on the Structure and Properties of CrAlN Films Prepared by Pulsed DC Reactive Sputtering in FTS Mode at High Al Content, MATERIALS TRANSACTIONS, vol.49, issue.9, pp.49-2082, 2008.
DOI : 10.2320/matertrans.MRA2008604

H. Hiroshi, Properties of GaN and related compounds studied by means of Raman scattering, Journal of Physics: Condensed Matter, pp.14-967, 2002.

M. B. Uffmann, A. P. Smirnov, R. A. Mirgorodsky, and . Evarestov, Phonon dispersion and Raman scattering in hexagonal GaN and AlN, Physical Review B, pp.58-12899, 1998.

L. Belluci, L. Chen, K. Chattopadyay, and . Chen, Spectral charcterisation of bulk and nanostructured aluminum nitride, Journal of Nanophotonics, vol.3, pp.1-16, 2009.

L. Trinkler, B. Berzina, A. Auzina, M. Benabdesselam, and P. Iacconi, UV light energy storage and thermoluminescence in AlN ceramics, physica status solidi (c), vol.219, issue.3, pp.1032-1035, 2007.
DOI : 10.1093/oxfordjournals.rpd.a005876

K. A. Aissa, A. Achour, J. Camus, L. L. Brizoual, P. Y. Jouan et al., Comparison of the structural properties and residual stress of AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering at different working pressures, Thin Solid Films, vol.550, pp.550-264, 2014.
DOI : 10.1016/j.tsf.2013.11.073
URL : https://hal.archives-ouvertes.fr/hal-00982773

M. Bogner, A. Hofer, G. Benstetter, H. Gruber, and R. Y. Fu, Differential 3? method for measuring thermal conductivity of AlN and Si3N4 thin films, Thin Solid Films, vol.591, pp.267-270, 2015.
DOI : 10.1016/j.tsf.2015.03.031