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The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

Abstract : The CuZnSn (CZT) precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu2ZnSnSe4 (CZTSe) absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 °C. The characterization methods of CZTSe thin films include X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS) in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu1+, Zn2+, Sn4+, Se2+. With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV. © 2017 Chinese Institute of Electronics.
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01515143
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Submitted on : Thursday, April 27, 2017 - 9:45:50 AM
Last modification on : Friday, July 10, 2020 - 4:10:20 PM

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J. Zhao, G. Liang, Y. Zeng, P. Fan, J. Hu, et al.. The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition. Journal of Semiconductors, Beijing : Chinese Institute of Electronics ; Bristol : IOP,, 2017, 38 (2), ⟨10.1088/1674-4926/38/2/023002⟩. ⟨hal-01515143⟩

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