Une surstructure de α-Ge, type diamant, induite par un dopage d'antimoine

Adrian Gomez Herrero 1 Lamia Hammoudi 2 Mohammed Kars 2 Thierry Roisnel 3 L. Carlos Otero-Diaz 1
1 UCM - Universidad Complutense de Madrid [Madrid]
2 USTHB - Université des Sciences et de la Technologie Houari Boumediene [Alger]
3 ISCR - Institut des Sciences Chimiques de Rennes
Abstract : Single crystals of antimony-doped germanium, Ge1-xSbx+0.01 (x similar or equal to 0.0625), were grown by chemical transport reaction. The alloy crystallizes as a superstructure of diamond-type alpha-Ge. All atoms in the asymmetric unit lie on special positions and are characterized by strong covalent bonds. The antimony atoms substitute for one germanium atom at full occupancy at Wyckoff position 4a (site symmetry (4) over bar 3m), and are also at an adjacent tetrahedral interstitial site with partially occupation (16%) at position 4c (or 4d) (site symmetry (4) over bar 3m). The structural model does not show close Sb center dot center dot center dot Sb contacts, and suggests that the interstitial antimony atoms move between the two adjacent tetrahedral sites.
Keywords : crystal structure antimony doped germanium superstructure
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Adrian Gomez Herrero, Lamia Hammoudi, Mohammed Kars, Thierry Roisnel, L. Carlos Otero-Diaz. Une surstructure de α-Ge, type diamant, induite par un dopage d'antimoine. Acta crystallographica. Section E, Crystallographic communications, International Union of Crystallography, 2017, 73 (5), pp.654-657. ⟨10.1107/S2056989017004996⟩. ⟨hal-01532176⟩

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