Photostability of pulsed-laser-deposited AsxTe100-x (x=40, 50, 60) amorphous thin films - Archive ouverte HAL Access content directly
Journal Articles Optics Letters Year : 2017

Photostability of pulsed-laser-deposited AsxTe100-x (x=40, 50, 60) amorphous thin films

Abstract

AsxTe100-x amorphous thin films were fabricated by a pulsed laser deposition technique with the aim of finding photostable layers in as-deposited but preferably in relaxed (annealed) state. Photostability was studied in terms of the films' stability of refractive index and bandgap under near-bandgap light irradiation. As40Te60 and As50Te50 layers were found to be photostable in both as-deposited as well as relaxed states. Moreover, As50Te50 layers present the lowest surface roughness. These characteristics make pulsed-laser-deposited As50Te50 thin films promising for applications in nonlinear optics.
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Dates and versions

hal-01532181 , version 1 (02-06-2017)

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Petra Hawlová, Marek Bouska, Virginie Nazabal, Emeline Baudet, Zdenek Cernosek, et al.. Photostability of pulsed-laser-deposited AsxTe100-x (x=40, 50, 60) amorphous thin films. Optics Letters, 2017, 42 (9), pp.1660--1663. ⟨10.1364/OL.42.001660⟩. ⟨hal-01532181⟩
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