Photostability of pulsed-laser-deposited AsxTe100-x (x=40, 50, 60) amorphous thin films

Petra Hawlová (1) , Marek Bouska (1) , Virginie Nazabal (2) , Emeline Baudet (1) , Zdenek Cernosek , Petr Nemec (1)

1 Department of Graphic Arts and Photophysics [University of Pardubice]
2 ISCR - Institut des Sciences Chimiques de Rennes

As_xTe_100-x amorphous thin films were fabricated by a pulsed laser deposition technique with the aim of finding photostable layers in as-deposited but preferably in relaxed (annealed) state. Photostability was studied in terms of the films' stability of refractive index and bandgap under near-bandgap light irradiation. As₄₀Te₆₀ and As₅₀Te₅₀ layers were found to be photostable in both as-deposited as well as relaxed states. Moreover, As₅₀Te₅₀ layers present the lowest surface roughness. These characteristics make pulsed-laser-deposited As₅₀Te₅₀ thin films promising for applications in nonlinear optics.

Domaines: Chimie

Petra Hawlová, Marek Bouska, Virginie Nazabal, Emeline Baudet, Zdenek Cernosek, et al.. Photostability of pulsed-laser-deposited AsxTe100-x (x=40, 50, 60) amorphous thin films. Optics Letters, 2017, 42 (9), pp.1660--1663. ⟨10.1364/OL.42.001660⟩. ⟨hal-01532181⟩