Facile Synthesis of γ-In2 Se3 Nanoflowers toward High Performance Self-Powered Broadband γ-In2 Se3 /Si Heterojunction Photodiode - Archive ouverte HAL Access content directly
Journal Articles Small Year : 2017

Facile Synthesis of γ-In2 Se3 Nanoflowers toward High Performance Self-Powered Broadband γ-In2 Se3 /Si Heterojunction Photodiode

Abstract

An effective colloidal process involving the hot-injection method is developed to synthesize uniform nanoflowers consisting of 2D γ-In2 Se3 nanosheets. By exploiting the narrow direct bandgap and high absorption coefficient in the visible light range of In2 Se3 , a high-quality γ-In2 Se3 /Si heterojunction photodiode is fabricated. This photodiode shows a high photoresponse under light illumination, short response/recovery times, and long-term durability. In addition, the γ-In2 Se3 /Si heterojunction photodiode is self-powered and displays a broadband spectral response ranging from UV to IR with a high responsivity and detectivity. These excellent performances make the γ-In2 Se3 /Si heterojunction very interesting as highly efficient photodetectors.
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Dates and versions

hal-01533326 , version 1 (06-06-2017)

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Shuo Chen, Xuemei Liu, Xvsheng Qiao, Xia Wan, Khurram Shehzad, et al.. Facile Synthesis of γ-In2 Se3 Nanoflowers toward High Performance Self-Powered Broadband γ-In2 Se3 /Si Heterojunction Photodiode. Small, 2017, 13 (18), ⟨10.1002/smll.201604033⟩. ⟨hal-01533326⟩
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