Response of Gallium Nitride Chemiresistors to Carbon Monoxide is Due to Oxygen Contamination

Ravi Mohan Prasad 1 Stefan Lauterbach 1 Hans-Joachim Kleebe 1 Odile Merdrignac-Conanec 2 Nicolae Barsan 3 Udo Weimar 3 Aleksander Gurlo 1
1 Fachbereich Material­ und Geowissenschaften
2 ISCR - Institut des Sciences Chimiques de Rennes
3 Institut für Physikalische und Theoretische Chemie
Abstract : We report on the influence of oxygen impurities on the gas sensing properties of gallium nitride (GaN) chemiresistors. As shown by XRD, elemental analysis, and TEM characterization, surface oxidation of GaN for example, upon contact to ambient air atmosphere creates an oxidative amorphous layer which provides the sites for the sensing toward CO. Treating this powder under dry ammonia at 800 degrees C converts the oxide layer in nitride, and consequently the sensing performance toward CO is dramatically reduced for ammonia treated GaN gas sensors. Hence the response of GaN sensors to CO is caused by oxygen in the form of amorphous surface oxide or oxynitride.
Keywords : chemiresistors gallium nitride carbon monoxide oxygen gallium oxide
Type de document :
Article dans une revue
ACS Sensors, American Chemical Society, 2017, 2 (6), pp.713-717. 〈10.1021/acssensors.7b00064〉
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01578533
Contributeur : Laurent Jonchère <>
Soumis le : mardi 5 septembre 2017 - 17:15:20
Dernière modification le : samedi 24 mars 2018 - 01:35:35

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Ravi Mohan Prasad, Stefan Lauterbach, Hans-Joachim Kleebe, Odile Merdrignac-Conanec, Nicolae Barsan, et al.. Response of Gallium Nitride Chemiresistors to Carbon Monoxide is Due to Oxygen Contamination. ACS Sensors, American Chemical Society, 2017, 2 (6), pp.713-717. 〈10.1021/acssensors.7b00064〉. 〈hal-01578533〉

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