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Journal articles
Enhancement of power factor in zinc antimonide thermoelectric thin film doped with titanium
Abstract : Titanium doped zinc antimonide thin films were prepared on flexible substrates by multi-step co-sputtering method, which can assure that the Ti is homogeneous distribution in the thin film. The influence of Ti content on the microstructure and thermoelectric properties of the ZnSb based thin films was systematically investigated. The high-resolution transmission electron microscopy and X-ray diffraction exhibit that the sample has nano-sized crystallites, which will lead to better thermoelectric properties. The electrical conductivity of the Ti-doping ZnSb thin films is stable at the temperature ranging from room-temperature to 200 °C and then it has a significant increase when the temperature continues increasing. As expected, the power factor of the thin film has almost 80% enhancement after Ti doped.
Keywords :
Sputtering
Thin films
Cited literature [13 references]
https://hal-univ-rennes1.archives-ouvertes.fr/hal-01581218
Contributor : Laurent Jonchère Connect in order to contact the contributor
Submitted on : Thursday, December 7, 2017 - 1:22:56 PM
Last modification on : Friday, July 2, 2021 - 1:16:23 PM
Contributor : Laurent Jonchère Connect in order to contact the contributor
Submitted on : Thursday, December 7, 2017 - 1:22:56 PM
Last modification on : Friday, July 2, 2021 - 1:16:23 PM
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