Enhancement of power factor in zinc antimonide thermoelectric thin film doped with titanium

Zhuang-Hao Zheng 1, 2 Fu Li 2, * Jing-Ting Luo 2 Guang-Xing Liang 1, 2 Hong-Li Ma 1 Xiang-Hua Zhang 1 Ping Fan 2, *
* Auteur correspondant
1 ISCR - Institut des Sciences Chimiques de Rennes
2 Shenzhen University [Shenzhen]
Abstract : Titanium doped zinc antimonide thin films were prepared on flexible substrates by multi-step co-sputtering method, which can assure that the Ti is homogeneous distribution in the thin film. The influence of Ti content on the microstructure and thermoelectric properties of the ZnSb based thin films was systematically investigated. The high-resolution transmission electron microscopy and X-ray diffraction exhibit that the sample has nano-sized crystallites, which will lead to better thermoelectric properties. The electrical conductivity of the Ti-doping ZnSb thin films is stable at the temperature ranging from room-temperature to 200 °C and then it has a significant increase when the temperature continues increasing. As expected, the power factor of the thin film has almost 80% enhancement after Ti doped.
Keywords : Sputtering Thin films
Type de document :
Article dans une revue
Materials Letters, Elsevier, 2017, 209, pp.455-458. 〈10.1016/j.matlet.2017.08.063〉
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Soumis le : jeudi 7 décembre 2017 - 13:22:56
Dernière modification le : samedi 24 mars 2018 - 01:47:27

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ISCR | UR1-UFR-SPM | INC-CNRS | UNIV-RENNES

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Zhuang-Hao Zheng, Fu Li, Jing-Ting Luo, Guang-Xing Liang, Hong-Li Ma, et al.. Enhancement of power factor in zinc antimonide thermoelectric thin film doped with titanium. Materials Letters, Elsevier, 2017, 209, pp.455-458. 〈10.1016/j.matlet.2017.08.063〉. 〈hal-01581218〉

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