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Enhanced thermoelectric properties in AZO thin films by introducing Ti co-dopant

Abstract : A drastic improvement in the power factor of Al-doped ZnO (AZO) thin film was achieved by introducing Ti as a co-dopant with Al. A Ti super-thin buffer layer was firstly deposited on the glass substrate, and then AZO thin films were deposited onto Ti buffer layer at room-temperature. The introduction of Ti buffer layer facilitated the growth of AZO films and improved its crystallinity. XPS and XRD results showed that Ti4+ substituted for Zn2+ site, which created extra electrons. Dual doping of ZnO with Al and Ti drastically increased the electrical conductivity and the Seebeck coefficient of AZO films at high temperature. As a result, a significant enhanced power factor as high as 12.8 × 10−4 Wm−1 K−2 was achieved at 573 K in Ti co-doped AZO films, which was more than 18 times larger than that of the films without Ti co-doping (0.64 × 10−4 Wm−1 K−2). © 2017 Elsevier Ltd
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Submitted on : Monday, September 4, 2017 - 2:39:10 PM
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J.-T. Luo, Z.-H. Zheng, G.-X. Liang, F. Li, P. Fan. Enhanced thermoelectric properties in AZO thin films by introducing Ti co-dopant. Materials Research Bulletin, Elsevier, 2017, 94, pp.307--312. ⟨10.1016/j.materresbull.2017.06.017⟩. ⟨hal-01581245⟩



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