The structural, optical and thermoelectric properties of single target sputtered Cu2ZnSn(S,Se)(4) thin film

Yang Zeng 1 Guangxing Liang Ping Fan 2 Yizhu Xie 1 Bo Fan 2 Juguang Hu 1 Zhuanghao Zheng 1 Xianghua Zhang 3 Jingting Luo 1 Dongping Zhang 1
1 Shenzhen Univerisity [Shenzhen]
2 Shenzhen University [Shenzhen]
3 ISCR - Institut des Sciences Chimiques de Rennes
Abstract : Cu2ZnSn(S,Se)(4) (CZTSSe) thin film was fabricated by radio frequency magnetron sputtering single CZTSSe target without post-selenization or sulfuration. The formation of kesterite-type CZTSSe films with a nearly stoichiometric composition after in-situ annealing at 673 K can be achieved. The valence of the elements in CZTSSe films are Cu(I), Zn(II), Sn(IV), S(-II) and Se(-II). Optical transmission and absorption spectroscopy measurement reveal high absorption and the energy band gap is about 1.44 eV. The CZTSSe thin film is of p-type conductivity and high Seebeck coefficient value is of 450 mu V/K.
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Journal articles
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01614763
Contributor : Laurent Jonchère <>
Submitted on : Wednesday, October 11, 2017 - 1:59:59 PM
Last modification on : Saturday, December 22, 2018 - 7:33:56 PM

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UNIV-RENNES1 | ISCR | UR1-UFR-SPM | INC-CNRS | SCR_VC | IVER | UNIV-RENNES | INSA-RENNES | INSA-GROUPE

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Yang Zeng, Guangxing Liang, Ping Fan, Yizhu Xie, Bo Fan, et al.. The structural, optical and thermoelectric properties of single target sputtered Cu2ZnSn(S,Se)(4) thin film. Journal of Materials Science: Materials in Electronics, Springer Verlag, 2017, 28 (18), pp.13763-13769. ⟨10.1007/s10854-017-7221-y⟩. ⟨hal-01614763⟩

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