The structural, optical and thermoelectric properties of single target sputtered Cu2ZnSn(S,Se)(4) thin film

Yang Zeng (1) , Guangxing Liang , Ping Fan (2) , Yizhu Xie (1) , Bo Fan (2) , Juguang Hu (1) , Zhuanghao Zheng (1) , Xianghua Zhang (3) , Jingting Luo (1) , Dongping Zhang (1)

1 Shenzhen Univerisity [Shenzhen]
2 Shenzhen University [Shenzhen]
3 ISCR - Institut des Sciences Chimiques de Rennes

Cu2ZnSn(S,Se)(4) (CZTSSe) thin film was fabricated by radio frequency magnetron sputtering single CZTSSe target without post-selenization or sulfuration. The formation of kesterite-type CZTSSe films with a nearly stoichiometric composition after in-situ annealing at 673 K can be achieved. The valence of the elements in CZTSSe films are Cu(I), Zn(II), Sn(IV), S(-II) and Se(-II). Optical transmission and absorption spectroscopy measurement reveal high absorption and the energy band gap is about 1.44 eV. The CZTSSe thin film is of p-type conductivity and high Seebeck coefficient value is of 450 mu V/K.

Domains: Chemical Sciences

Yang Zeng, Guangxing Liang, Ping Fan, Yizhu Xie, Bo Fan, et al.. The structural, optical and thermoelectric properties of single target sputtered Cu2ZnSn(S,Se)(4) thin film. Journal of Materials Science: Materials in Electronics, 2017, 28 (18), pp.13763-13769. ⟨10.1007/s10854-017-7221-y⟩. ⟨hal-01614763⟩