The structural, optical and thermoelectric properties of single target sputtered Cu2ZnSn(S,Se)(4) thin film

Yang Zeng 1 Guangxing Liang Ping Fan 2 Yizhu Xie 1 Bo Fan 2 Juguang Hu 1 Zhuanghao Zheng 1 Xianghua Zhang 3 Jingting Luo 1 Dongping Zhang 1
1 Shenzhen Univerisity [Shenzhen]
2 Shenzhen University [Shenzhen]
3 ISCR - Institut des Sciences Chimiques de Rennes
Abstract : Cu2ZnSn(S,Se)(4) (CZTSSe) thin film was fabricated by radio frequency magnetron sputtering single CZTSSe target without post-selenization or sulfuration. The formation of kesterite-type CZTSSe films with a nearly stoichiometric composition after in-situ annealing at 673 K can be achieved. The valence of the elements in CZTSSe films are Cu(I), Zn(II), Sn(IV), S(-II) and Se(-II). Optical transmission and absorption spectroscopy measurement reveal high absorption and the energy band gap is about 1.44 eV. The CZTSSe thin film is of p-type conductivity and high Seebeck coefficient value is of 450 mu V/K.
Type de document :
Article dans une revue
Journal of Materials Science: Materials in Electronics, Springer Verlag, 2017, 28 (18), pp.13763-13769. 〈10.1007/s10854-017-7221-y〉
Domaine :
Liste complète des métadonnées
https://hal-univ-rennes1.archives-ouvertes.fr/hal-01614763
Contributeur : Laurent Jonchère <>
Soumis le : mercredi 11 octobre 2017 - 13:59:59
Dernière modification le : samedi 22 décembre 2018 - 19:33:56

Identifiants

Collections

ISCR | UR1-UFR-SPM | INC-CNRS | SCR_VC | IVER | UNIV-RENNES | INSA-RENNES

Citation

Yang Zeng, Guangxing Liang, Ping Fan, Yizhu Xie, Bo Fan, et al.. The structural, optical and thermoelectric properties of single target sputtered Cu2ZnSn(S,Se)(4) thin film. Journal of Materials Science: Materials in Electronics, Springer Verlag, 2017, 28 (18), pp.13763-13769. 〈10.1007/s10854-017-7221-y〉. 〈hal-01614763〉

Exporter

BibTeX TEI DC DCterms EndNote

Partager

Métriques

Consultations de la notice

72