The structural, optical and thermoelectric properties of single target sputtered Cu2ZnSn(S,Se)(4) thin film

Abstract : Cu2ZnSn(S,Se)(4) (CZTSSe) thin film was fabricated by radio frequency magnetron sputtering single CZTSSe target without post-selenization or sulfuration. The formation of kesterite-type CZTSSe films with a nearly stoichiometric composition after in-situ annealing at 673 K can be achieved. The valence of the elements in CZTSSe films are Cu(I), Zn(II), Sn(IV), S(-II) and Se(-II). Optical transmission and absorption spectroscopy measurement reveal high absorption and the energy band gap is about 1.44 eV. The CZTSSe thin film is of p-type conductivity and high Seebeck coefficient value is of 450 mu V/K.
Type de document :
Article dans une revue
Journal of Materials Science: Materials in Electronics, Springer Verlag, 2017, 28 (18), pp.13763-13769. 〈10.1007/s10854-017-7221-y〉
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01614763
Contributeur : Laurent Jonchère <>
Soumis le : mercredi 11 octobre 2017 - 13:59:59
Dernière modification le : vendredi 25 mai 2018 - 01:26:25

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Yang Zeng, Guangxing Liang, Ping Fan, Yizhu Xie, Bo Fan, et al.. The structural, optical and thermoelectric properties of single target sputtered Cu2ZnSn(S,Se)(4) thin film. Journal of Materials Science: Materials in Electronics, Springer Verlag, 2017, 28 (18), pp.13763-13769. 〈10.1007/s10854-017-7221-y〉. 〈hal-01614763〉

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