Morphological impact of insulator on inkjet-printed transistor

Sjeung Jae Moon (1) , Malo Robin (2) , Kuai Wenlin (1) , Molard Yann (2) , Byung Seong Bae , Tayeb Mohammed-Brahim (1) , Emmanuel Jacques (1) , Maxime Harnois (1)

1 IETR - Institut d'Électronique et des Technologies du numéRique
2 ISCR - Institut des Sciences Chimiques de Rennes

This study reports on the impact of electrodes (source and drain) and insulator cross-sectional profile on the electrical behavior of printed organic field effect transistors (OFET). Varying processing technique from classical lithography to inkjet printing shows different cross-sectional profile. Indeed, due to coffee stain effect (usually considered as a drawback), inkjet-printed insulator shows wave-shaped profile although spin-coated one is perfectly smooth. However, OFET electrical behavior is not drastically impacted by insulator cross-sectional profile. Moreover, this study clearly demonstrates that independently of insulator cross sectional profile, OFET fabricated with printed-electrodes shows the worst electrical characteristics. Consequently, this work clearly demonstrates that a challenging issue for the fabrication of efficient fully-printed OFET relies on drain and source optimization (morphology or material for instance).

Keywords: inkjet printing; organic field effect transistors; polymeric insulator; access resistance; drop on demand

Domains: Chemical Sciences

Sjeung Jae Moon, Malo Robin, Kuai Wenlin, Molard Yann, Byung Seong Bae, et al.. Morphological impact of insulator on inkjet-printed transistor. Flexible and Printed Electronics, 2017, 2 (3), pp.035008. ⟨10.1088/2058-8585/aa8760⟩. ⟨hal-01622463⟩