Optimization in fabricating skutterudite CoSb3 thermoelectric thin films

Z.-H. Zheng 1 M. Wei F. Li J.-T. Luo H.-L. Ma 1 G.-X. Liang 1 X.-H. Zhang 1 P. Fan
1 ISCR - Institut des Sciences Chimiques de Rennes
Abstract : CoSb3 based thin films were prepared at room temperature by radio-frequency sputtering and the CoSb3 alloy targets were used with the Co:Sb atomic ratio of 1:3, 1:3.5 and 1:4, respectively. Then the as-deposited thin films were annealed at 300 and 325 °C under argon atmosphere for 1 h. It can be found that the thin films have single skutterudite phase structure when used the Co:Sb (1:3.5) alloy target. Though other films show the primary CoSb3 phase structure, there are some impurity phases can be observed from the X-ray diffraction patterns. For contrast, the thin films prepared by the Co:Sb (1:3.5) alloy target were annealed from 250 to 350 °C with the temperature interval of 25 °C. The results show that the thin film annealed at 325 °C has the best thermoelectric performance. © 2017, Springer Science+Business Media, LLC.
Keywords : Annealing Antimony Cobalt Film preparation Phase structure Skutterudites Sputtering Thermoelectricity X ray diffraction Argon atmospheres As-deposited thin films Atomic ratio Impurity phasis Radio frequency sputtering Temperature intervals Thermoelectric performance Thermoelectric thin films Thin films
Type de document :
Article dans une revue
Journal of Materials Science: Materials in Electronics, Springer Verlag, 2017, 28 (22), pp.17221-17226. 〈10.1007/s10854-017-7652-5〉
Domaine :
Liste complète des métadonnées
https://hal-univ-rennes1.archives-ouvertes.fr/hal-01639690
Contributeur : Laurent Jonchère <>
Soumis le : lundi 20 novembre 2017 - 15:13:39
Dernière modification le : lundi 2 juillet 2018 - 15:22:05

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ISCR | UR1-UFR-SPM | INC-CNRS | UNIV-RENNES | SCR-MI-INSA

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Z.-H. Zheng, M. Wei, F. Li, J.-T. Luo, H.-L. Ma, et al.. Optimization in fabricating skutterudite CoSb3 thermoelectric thin films. Journal of Materials Science: Materials in Electronics, Springer Verlag, 2017, 28 (22), pp.17221-17226. 〈10.1007/s10854-017-7652-5〉. 〈hal-01639690〉

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