Mid-infrared guided photoluminescence from integrated Pr3+-doped selenide ridge waveguides

Abstract : Praseodymium-doped selenide thin films are deposited by radio frequency magnetron sputtering on thermally oxidized silicon wafers and undoped selenide layers. Ridge waveguides are then processed using photolithography and dry etching techniques. Under optical pumping at 1.55 μm, broadband guided mid-infrared photoluminescence is recorded for the first time for wavelengths above 4 μm from rare earth-doped integrated chalcogenides waveguides. Optical design confirmed that these active waveguides allow single-mode optical propagation at a wavelength of 4.70 μm.
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Article dans une revue
Optical Materials, Elsevier, 2018, 75, pp.109-115. 〈10.1016/j.optmat.2017.10.001〉
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01639691
Contributeur : Laurent Jonchère <>
Soumis le : lundi 20 novembre 2017 - 15:13:44
Dernière modification le : vendredi 6 juillet 2018 - 12:34:02

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Loïc Bodiou, Florent Starecki, Jonathan Lemaitre, Virginie Nazabal, Jean-Louis Doualan, et al.. Mid-infrared guided photoluminescence from integrated Pr3+-doped selenide ridge waveguides. Optical Materials, Elsevier, 2018, 75, pp.109-115. 〈10.1016/j.optmat.2017.10.001〉. 〈hal-01639691〉

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