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Advances in the understanding of microscopic switching mechanisms in ReRAM devices (Invited paper)

Abstract : In this paper we present the recent advances in the understanding of microscopic mechanisms driving the resistive switching in ReRAM devices using ab initio theoretical methods. We highlight the complex interplay between interface reactions and charge injection in the generation of oxygen Frenkel pairs during the forming step. Energy barrier calculations suggest that the formation/destruction of the conductive filament can be due to movements of oxygen vacancies composing the filament or interaction with oxygen atoms released from the metal electrode. © 2017 IEEE.
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01671616
Contributor : Laurent Jonchère <>
Submitted on : Friday, December 22, 2017 - 2:36:07 PM
Last modification on : Friday, July 10, 2020 - 4:20:01 PM

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B. Skienard, P. Blaise, Boubacar Traore, A. Dragoni, C. Nail, et al.. Advances in the understanding of microscopic switching mechanisms in ReRAM devices (Invited paper). 47th European Solid-State Device Research Conference, ESSDERC 2017, Sep 2017, Leuven, Belgium. ⟨10.1109/ESSDERC.2017.8066588⟩. ⟨hal-01671616⟩

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