Theoretical insights and experimental characterization of HfO 2 -based OxRRAMs operation

Boubacar Traore; Patrick Blaise; E. Vianello; B. Sklenard

doi:10.1007/s10825-017-1085-5

Journal Articles Journal of Computational Electronics Year : 2017

Theoretical insights and experimental characterization of HfO 2 -based OxRRAMs operation

(1) , (2) , (2) , (2)

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Boubacar Traore

Function : Correspondent author
PersonId : 176597
IdHAL : boubacar-traore
ORCID : 0000-0003-0568-4141
IdRef : 188870881

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Institut des Sciences Chimiques de Rennes

Patrick Blaise

Function : Author
PersonId : 173427
IdHAL : patrick-blaise
ORCID : 0000-0003-4609-5351
IdRef : 057729727

Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

CV

E. Vianello

Function : Author

Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

B. Sklenard

Function : Author

Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Keywords

Ti/HfO 2 interface Oxygen vacancy (Vo) diffusion HfTiO HfO 2 HfAlO Doping/alloying Data retention Conductive filament (CF)

Domains

Chemical Sciences

Laurent Jonchère : Connect in order to contact the contributor

https://hal-univ-rennes1.archives-ouvertes.fr/hal-01671617

Submitted on : Friday, December 22, 2017-2:36:11 PM

Last modification on : Friday, March 10, 2023-4:18:27 PM

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hal-01671617 , version 1 (22-12-2017)

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HAL Id : hal-01671617 , version 1
DOI : 10.1007/s10825-017-1085-5

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Boubacar Traore, Patrick Blaise, E. Vianello, B. Sklenard. Theoretical insights and experimental characterization of HfO 2 -based OxRRAMs operation. Journal of Computational Electronics, 2017, 16 (4), pp.1045-1056. ⟨10.1007/s10825-017-1085-5⟩. ⟨hal-01671617⟩

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Theoretical insights and experimental characterization of HfO 2 -based OxRRAMs operation

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