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Substrate Temperature-Assisted Preparation of CZTSSe Thin Films by a Single Quinary Target

Abstract : Cu2ZnSn(S,Se)(4) (CZTSSe) thin films have been grown by RF-magnetron sputtering from a quinary CZTSSe target without subsequent selenization or sulfuration. We investigated the compositions, surface morphology, and crystal structural and optical properties of the CZTSSe thin films. At a substrate temperature of 450A degrees C, the CZTSSe thin films displayed nearly ideal stoichiometric compositions that contributed to their grain growth and crystalline quality. The x-ray diffraction results confirmed that the CZTSSe thin films exhibited a (112) plane preferred orientation with good crystalline quality. The bandgap energy was approximately 1.45 eV. This study determined the optimum substrate temperature to improve the performance of CZTSSe thin films.
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01685698
Contributor : Laurent Jonchère <>
Submitted on : Tuesday, January 16, 2018 - 4:15:47 PM
Last modification on : Thursday, March 5, 2020 - 2:05:31 PM

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Jun Zhao, Guang-Xing Liang, Ju-Guang Hu, Zhuang-Hao Zheng, Jing-Ting Luo, et al.. Substrate Temperature-Assisted Preparation of CZTSSe Thin Films by a Single Quinary Target. Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2018, 47 (1), pp.873-878. ⟨10.1007/s11664-017-5881-2⟩. ⟨hal-01685698⟩

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