Substrate Temperature-Assisted Preparation of CZTSSe Thin Films by a Single Quinary Target
Résumé
Cu2ZnSn(S,Se)(4) (CZTSSe) thin films have been grown by RF-magnetron sputtering from a quinary CZTSSe target without subsequent selenization or sulfuration. We investigated the compositions, surface morphology, and crystal structural and optical properties of the CZTSSe thin films. At a substrate temperature of 450A degrees C, the CZTSSe thin films displayed nearly ideal stoichiometric compositions that contributed to their grain growth and crystalline quality. The x-ray diffraction results confirmed that the CZTSSe thin films exhibited a (112) plane preferred orientation with good crystalline quality. The bandgap energy was approximately 1.45 eV. This study determined the optimum substrate temperature to improve the performance of CZTSSe thin films.