Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System

Xinyu Huang (1) , Qing Jiao (1) , Changgui Lin (1) , Hongli Ma (2) , Xianghua Zhang (2) , Erwei Zhu (1) , Xueyun Liu (1) , Shixun Dai (1) , Tiefeng Xu (1)

1 NBUT - Ningbo University of Technology
2 ISCR - Institut des Sciences Chimiques de Rennes

Novel glasses in a Ga2S3-Sb2S3-AgI system were prepared with a melt-quenching method, and their glass-forming region was identified. The maximum dissolvable AgI in glasses was 65 mol%. The thermal, optical, and structural properties of glasses were investigated as a function of AgI and Ga2S3 contents. The Ga2S3-Sb2S3-AgI glasses possess a wide region of transmission window (0.65-14 mu m). An ionic conductivity of approximately 1.01 x 10(-3) S/cm can be obtained for a 40 (0.8Sb(2)S(3)-0.2Ga(2)S(3))-60AgI glass at an ambient temperature, and the ionic conductivity increased as temperature increased. The relative activation energy of Ag+ conduction was also calculated. These novel glasses show potential for the combined application of infrared optics and solid electrolytes.

Domains: Chemical Sciences

Xinyu Huang, Qing Jiao, Changgui Lin, Hongli Ma, Xianghua Zhang, et al.. Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System. Scientific Reports, 2018, 8 (1), pp.1699. ⟨10.1038/s41598-018-20144-3⟩. ⟨hal-01709532⟩