Advances in the understanding of microscopic switching mechanisms in ReRAM devices

Benoit Sklenard; Philippe Blaise; Boubacar Traore; Alberto Dragoni; Cecile Nail; Elisa Vianello

Conference papers

Advances in the understanding of microscopic switching mechanisms in ReRAM devices

Benoit Sklenard ¹ Philippe Blaise ¹ Boubacar Traore ² Alberto Dragoni ¹ Cecile Nail ^{3, 1} Elisa Vianello ^{4, 1}

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

2 ISCR - Institut des Sciences Chimiques de Rennes

3 CNRS - Centre National de la Recherche Scientifique

4 UGA [2016-2019] - Université Grenoble Alpes [2016-2019]

Abstract : In this paper we present the recent advances in the understanding of microscopic mechanisms driving the resistive switching in ReRAM devices using ab initio theoretical methods. We highlight the complex interplay between interface reactions and charge injection in the generation of oxygen Frenkel pairs during the forming step. Energy barrier calculations suggest that the formation/destruction of the conductive filament can be due to movements of oxygen vacancies composing the filament or interaction with oxygen atoms released from the metal electrode.

Document type :

Conference papers

Domain :

Chemical Sciences

Complete list of metadatas

https://hal-univ-rennes1.archives-ouvertes.fr/hal-01771115
Contributor : Laurent Jonchère <>
Submitted on : Thursday, April 19, 2018 - 1:37:06 PM
Last modification on : Saturday, July 11, 2020 - 3:18:19 AM

Advances in the understanding of microscopic switching mechanisms in ReRAM devices

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Advances in the understanding of microscopic switching mechanisms in ReRAM devices

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