Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3

M. Querre (1, 2) , J. Tranchant (1) , B. Corraze (1) , Stéphane Cordier (2) , V. Bouquet (2) , Stephanie Deputier (2) , Maryline Guilloux-Viry (2) , M. -P. Besland (1) , Etienne Janod (1) , Laurent Cario (1)

1 IMN - Institut des Matériaux Jean Rouxel
2 ISCR - Institut des Sciences Chimiques de Rennes

Mots clés: Mott insulators; V2O3; Mott transition; Resistive switching; Non-volatile memory; ReRAM

Domaines: Chimie

M. Querre, J. Tranchant, B. Corraze, Stéphane Cordier, V. Bouquet, et al.. Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3. Physica B: Condensed Matter, 2018, 536, pp.327-330. ⟨10.1016/j.physb.2017.10.060⟩. ⟨hal-01807075⟩