Impact of bulky phenylalkyl substituents on the air-stable n-channel transistors of birhodanine analogues

K. Iijima (1) , Y. Le Gal (2) , D. Lorcy (2) , T. Mori (1)

1 TITECH - Tokyo Institute of Technology [Tokyo]
2 ISCR - Institut des Sciences Chimiques de Rennes

By introducing bulky 2-phenylethyl groups into sulfur-rich electron acceptors, 5,5'-bithiazolidinylidene-2,2'-dione-4,4'-dithione and 5,5'-bithiazolidinylidene-2,4,2',4'-tetrathione, electron transport with the mobility of 0.27 cm V s with ambient and long-term stability is achieved in thin-film transistors. Bulky groups destroy the intermolecular S-S network, but the long-term transistor stability is maintained. Here, benzyl groups realize one-dimensional stacking structures, whereas 2-phenylethyl groups lead to herringbone structures.

Mots clés: Electron transport properties; Thin film transistors; Air stable; Benzyl group; Dithione; Electron acceptor; Electron transport; Long term stability; N-channel transistors; S networks; Field effect transistors

Domaines: Chimie

K. Iijima, Y. Le Gal, D. Lorcy, T. Mori. Impact of bulky phenylalkyl substituents on the air-stable n-channel transistors of birhodanine analogues. RSC Advances, 2018, 8 (33), pp.18400-18405. ⟨10.1039/c8ra03362e⟩. ⟨hal-01809170⟩