Universal description of III-V/Si epitaxial growth processes

Abstract : Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically resolved microscopy shows that monodomain three-dimensional islands are observed at the early stages of AlSb, AlN, and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free-energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including a description of the formation of antiphase boundaries.
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Ida Lucci, Simon Charbonnier, L. Pedesseau, M. Vallet, Laurent Cerutti, et al.. Universal description of III-V/Si epitaxial growth processes. Physical Review Materials, American Physical Society, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩. ⟨hal-01833206⟩

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