Skip to Main content Skip to Navigation
Journal articles

Optical Characterizations of VCSEL for Emission at 850 nm with Al Oxide Confinement Layers

Abstract : In-plane micro-photoluminescence (mu-PL) and micro-reflectivity measurements have been performed at room temperature by optical excitation perpendicular to the surface of two different structures a complete vertical surface-emitting laser (VCSEL) structure and a VCSEL without the upper p-type distributed Bragg reflector (P-DBR). The two structures were both laterally oxidized and measurements were made on the top of oxidized and unoxidized regions. We show that, since the photoluminescence (PL) spectra consist of the cumulative effect of InGaAs/AlGaAs multi-quantum wells (MQWs) luminescence and interferences in the DBR, the presence or not of the P-DBR and oxide layers can significantly modify the spectrum. mu-PL mapping performed on full VCSEL structures clearly shows oxidized and unoxidized regions that are not resolved with visible light optical microscopy. Finally, preliminary measurements of the degree of polarization (DOP) of the PL have been made on a complete VCSEL structure before and after an oxidation process. We obtain an image of DOP measured by polarization-resolved mu-PL. These measurements allow us to evaluate the main components of strain.
Document type :
Journal articles
Complete list of metadata

Cited literature [15 references]  Display  Hide  Download
Contributor : Laurent Jonchère Connect in order to contact the contributor
Submitted on : Friday, September 14, 2018 - 11:30:42 AM
Last modification on : Wednesday, October 27, 2021 - 12:38:27 PM
Long-term archiving on: : Saturday, December 15, 2018 - 4:17:36 PM


Mokhtari_Optical Characterizat...
Files produced by the author(s)




Merwan Mokhtari, Philippe Pagnod-Rossiaux, Francois Laruelle, Jean-Pierre Landesman, Alain Moréac, et al.. Optical Characterizations of VCSEL for Emission at 850 nm with Al Oxide Confinement Layers. Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2018, Special Section: 17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII), 47 (9), pp.4987-4992. ⟨10.1007/s11664-018-6221-x⟩. ⟨hal-01861355⟩



Record views


Files downloads