Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces

Abstract : We investigated deformation of InP that was introduced by thin, narrow, dielectric SINx stripes on the (100) surface of InP substrates. Quantitative optical measurements were performed using two different techniques based on luminescence from the InP first, by degree of polarization of photoluminescence; and second, by cathodoluminescence spectroscopy. The two techniques provide complementary information on deformation of the InP and thus together provide a means to evaluate approaches to simulation of the deformation owing to dielectric stripes. Ultimately, these deformations can be used to estimate changes in refractive index and gain that are a result of the stripes. (C) 2018 Optical Society of America
Document type :
Journal articles
Complete list of metadatas

https://hal-univ-rennes1.archives-ouvertes.fr/hal-01861356
Contributor : Laurent Jonchère <>
Submitted on : Friday, August 24, 2018 - 1:53:39 PM
Last modification on : Wednesday, April 3, 2019 - 2:07:07 AM

Links full text

Identifiers

Citation

Jean-Pierre Landesman, Daniel Cassidy, Marc Fouchier, Christophe Levallois, Erwine Pargon, et al.. Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces. Optics Letters, Optical Society of America, 2018, 43 (15), pp.3505. ⟨10.1364/OL.43.003505⟩. ⟨hal-01861356⟩

Share

Metrics

Record views

124