Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces

Jean-Pierre Landesman (1, 2) , Daniel T Cassidy (2) , Marc Fouchier (3) , Christophe Levallois (4) , Erwine Pargon (3) , Névine Rochat (5) , Merwan Mokhtari (1) , Juan Jiménez (6) , Alfredo Torres (6)

1 IPR - Institut de Physique de Rennes
2 McMaster University [Hamilton, Ontario]
3 LTM - Laboratoire des technologies de la microélectronique
4 Institut FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON
5 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
6 UVa - Universidad de Valladolid [Valladolid]

We investigated deformation of InP that was introduced by thin, narrow, dielectric SINx stripes on the (100) surface of InP substrates. Quantitative optical measurements were performed using two different techniques based on luminescence from the InP first, by degree of polarization of photoluminescence; and second, by cathodoluminescence spectroscopy. The two techniques provide complementary information on deformation of the InP and thus together provide a means to evaluate approaches to simulation of the deformation owing to dielectric stripes. Ultimately, these deformations can be used to estimate changes in refractive index and gain that are a result of the stripes. (C) 2018 Optical Society of America

Keywords: (240.0310) Thin films; other optical properties; (310.5448) Polarization; etc.); chemical; (310.4925) Other properties (stress; (250.1500) Cathodoluminescence; (250.5230) Photoluminescence; OCIS codes: (160.6000) Semiconductor materials

Domains: Physics [physics]

Jean-Pierre Landesman, Daniel T Cassidy, Marc Fouchier, Christophe Levallois, Erwine Pargon, et al.. Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces. Optics Letters, 2018, 43 (15), pp.3505. ⟨10.1364/OL.43.003505⟩. ⟨hal-01861356⟩