The Effect of Bake Temperature on SU-8 Gate Insulator of IGZO Thin Film Transistor

Min-Taek Hong (1) , Seung Jae Moon (1) , Jong Mo Lee (1) , Byung Seong Bae (1) , Eui-Jung Yun (1) , Maxime Harnois (2) , Emmanuel Jacques (2) , Tayeb Mohammed-Brahim (2)

1 Hoseo Université de Corée du Sud
2 IETR - Institut d'Électronique et des Technologies du numéRique

SU-8 photoresist was applied to the gate insulator of a-IGZO TFT. The hard bake temperature of SU-8 is important and was varied from 95 to 185 A degrees C. The FTIR showed that hard-bake temperature higher than 125 A degrees C is necessary for complete polymerization. The leakage current and breakdown voltage were improved as increasing hard bake temperatures to 155 A degrees C. However, the crack was generated at 185 A degrees C degrading the electrical characteristics of insulator. The SU-8 insulator was successfully applied to a-IGZO TFT where the on-off ratio was highest for hard-bake temperature of 155 A degrees C.

Mots clés: Oxide semiconductor; Oxide TFT; Low voltage driving; Insulator; Oxidation response

Domaines: Sciences de l'ingénieur [physics]

Min-Taek Hong, Seung Jae Moon, Jong Mo Lee, Byung Seong Bae, Eui-Jung Yun, et al.. The Effect of Bake Temperature on SU-8 Gate Insulator of IGZO Thin Film Transistor. Journal of the Korean Physical Society, 2018, 73 (3), pp.297-301. ⟨10.3938/jkps.73.297⟩. ⟨hal-01879714⟩