Electronic structure of Ln2O2Te (Ln=La, Sm and Gd) by X-ray absorption spectroscopy

S. Gautam K.H. Chae J. Llanos O. Peña 1 K. Asokan 2
1 ISCR - Institut des Sciences Chimiques de Rennes
2 IUC - Inter-University Accelerator Center
Abstract : The oxytellurides are layered structure material which shows low lattice thermal conductivity and hence making them suitable for high temperature thermoelectric applications. We report the electronic structural properties of rare-earth doped oxytellurides [Ln2O2Te (Ln = La, Sm and Gd)] prepared by solid state reaction method. This research is focused on the suitability of rare-earth oxychalcogenide as a thermoelectric material using the electronic structure investigations. The X-ray absorption spectra at O K-edge show the O 2p bonding with Ln 5d and 4f and Te 5s states and the Ln M-edges show that the valences of Ln are to be trivalent or mixed states. The Ln M-edges are also simulated with Cowan code, and electronic structures of these oxytellurides are discussed. The substitution of different rare earth metals at the Ln-site, may enhance the thermoelectric property and stability of the material. © 2018 Elsevier Ltd
Keywords : Email address: sgautam@puacin (Sanjeev Gautam) 71.20.Ps 78.70.Dm 84.60.Rb NEXAFS Oxychalcogenide Rare earth alloys and compounds Thermoelectric material synchrotron radiation PACS: 7120Eh 7870Dm * Corresponding author: Phone/Fax: ++91-9779713212
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S. Gautam, K.H. Chae, J. Llanos, O. Peña, K. Asokan. Electronic structure of Ln2O2Te (Ln=La, Sm and Gd) by X-ray absorption spectroscopy. Vacuum, Elsevier, 2018, 158, pp.39-41. ⟨10.1016/j.vacuum.2018.09.008⟩. ⟨hal-01905104⟩

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