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Journal articles
Electronic structure of Ln2O2Te (Ln=La, Sm and Gd) by X-ray absorption spectroscopy
Abstract : The oxytellurides are layered structure material which shows low lattice thermal conductivity and hence making them suitable for high temperature thermoelectric applications. We report the electronic structural properties of rare-earth doped oxytellurides [Ln2O2Te (Ln = La, Sm and Gd)] prepared by solid state reaction method. This research is focused on the suitability of rare-earth oxychalcogenide as a thermoelectric material using the electronic structure investigations. The X-ray absorption spectra at O K-edge show the O 2p bonding with Ln 5d and 4f and Te 5s states and the Ln M-edges show that the valences of Ln are to be trivalent or mixed states. The Ln M-edges are also simulated with Cowan code, and electronic structures of these oxytellurides are discussed. The substitution of different rare earth metals at the Ln-site, may enhance the thermoelectric property and stability of the material. © 2018 Elsevier Ltd
Cited literature [24 references]
https://hal-univ-rennes1.archives-ouvertes.fr/hal-01905104
Contributor : Laurent Jonchère <>
Submitted on : Friday, December 14, 2018 - 4:02:36 PM
Last modification on : Thursday, February 7, 2019 - 2:41:08 PM
Document(s) archivé(s) le : Friday, March 15, 2019 - 1:10:05 PM
Contributor : Laurent Jonchère <>
Submitted on : Friday, December 14, 2018 - 4:02:36 PM
Last modification on : Thursday, February 7, 2019 - 2:41:08 PM
Document(s) archivé(s) le : Friday, March 15, 2019 - 1:10:05 PM
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