A high performance broadband photodetector based on (SnxSb1−x)2Se3 nanorods with enhanced electrical conductivity
Résumé
Sb2Se3 is a highly interesting narrow band gap semiconductor with promising applications in new-generation electronic and photoelectronic devices. However, it has intrinsically low electrical conductivity, which limits its broader scope of applications. To overcome this challenge, Sn-doped Sb2Se3 ((SnxSb1−x)2Se3) nanorods with enhanced electrical conductivity are firstly synthesized via a facile hot-injection method. With increasing the doping concentration of Sn4+, the (SnxSb1−x)2Se3 nanorods exhibit several orders of magnitude improvement in electrical conductivity, which originates from the increase of carrier concentration. The photodetector based on the (SnxSb1−x)2Se3 nanorod film shows a higher responsivity (6.21 A W−1) and external quantum efficiency (906%), a lower noise equivalent power (3.14 × 10−13 W Hz−1/2), and a fast response time (0.04 s), surpassing the performance of the Sb2Se3 nanorod film photodetector. In addition, the (SnxSb1−x)2Se3 nanorod film photodetector also displays a broadband spectral response ranging from UV to IR. Those excellent performances unambiguously demonstrate that the (SnxSb1−x)2Se3 nanorods are promising for utilization as highly efficient broadband photodetectors. © The Royal Society of Chemistry.
Mots clés
Carrier concentration
Electric conductivity
Energy gap
Doping concentration
Tin compounds
Semiconductor doping
External quantum efficiency
Electrical conductivity
Nanorods
Narrow band gap semiconductors
Photodetectors
Photons
Selenium compounds
Semiconducting selenium compounds
Semiconductor devices
Fast response time
Orders of magnitude
Photo-electronic devices
Scope of application
Spectral response
Semiconducting antimony compounds