A high performance broadband photodetector based on (SnxSb1−x)2Se3 nanorods with enhanced electrical conductivity

Abstract : Sb2Se3 is a highly interesting narrow band gap semiconductor with promising applications in new-generation electronic and photoelectronic devices. However, it has intrinsically low electrical conductivity, which limits its broader scope of applications. To overcome this challenge, Sn-doped Sb2Se3 ((SnxSb1−x)2Se3) nanorods with enhanced electrical conductivity are firstly synthesized via a facile hot-injection method. With increasing the doping concentration of Sn4+, the (SnxSb1−x)2Se3 nanorods exhibit several orders of magnitude improvement in electrical conductivity, which originates from the increase of carrier concentration. The photodetector based on the (SnxSb1−x)2Se3 nanorod film shows a higher responsivity (6.21 A W−1) and external quantum efficiency (906%), a lower noise equivalent power (3.14 × 10−13 W Hz−1/2), and a fast response time (0.04 s), surpassing the performance of the Sb2Se3 nanorod film photodetector. In addition, the (SnxSb1−x)2Se3 nanorod film photodetector also displays a broadband spectral response ranging from UV to IR. Those excellent performances unambiguously demonstrate that the (SnxSb1−x)2Se3 nanorods are promising for utilization as highly efficient broadband photodetectors. © The Royal Society of Chemistry.
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Submitted on : Thursday, November 29, 2018 - 10:44:09 AM
Last modification on : Tuesday, September 17, 2019 - 3:04:10 PM

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S. Chen, K. Shehzad, X. Qiao, X. Luo, X. Liu, et al.. A high performance broadband photodetector based on (SnxSb1−x)2Se3 nanorods with enhanced electrical conductivity. Journal of Materials Chemistry C, 2018, 6 (41), pp.11078-11085. ⟨10.1039/c8tc03834a⟩. ⟨hal-01939061⟩

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