Large (GeTe)(Sb2Te3) ratio phase change memory thin films

M. Bouska (1) , Stanislav Pechev (2) , Quentin Simon (2) , Virginie Nazabal (1, 3) , J. Gutwirth (1) , S. Normani (1) , P. Nemec (1)

1 University of Pardubice
2 ICMCB - Institut de Chimie de la Matière Condensée de Bordeaux
3 ISCR - Institut des Sciences Chimiques de Rennes

Phase change memory thin films from Ge-Sb-Te system with large (GeTe)(Sb2Te3) ratio have been deposited via UV pulsed laser deposition technique. The studied compositions were Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15. Physico-chemical properties of the Ge-Sb-Te thin films, based on the scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, optical reflectivity, sheet resistance temperature dependences, and variable angle spectroscopic ellipsometry measurements, were studied in order to assess the effect of chemical composition of the deposited layers. All the obtained data confirm the importance of GeTe content in (GeTe)(1-x)(Sb2Te3)(x) thin films.

Keywords: thin films; phase change memory materials; chalcogenides; Ge-Sb-Te

Domains: Chemical Sciences

M. Bouska, Stanislav Pechev, Quentin Simon, Virginie Nazabal, J. Gutwirth, et al.. Large (GeTe)(Sb2Te3) ratio phase change memory thin films. Conference on Fiber Lasers and Glass Photonics - Materials through Applications, Apr 2018, Strasbourg, France. ⟨10.1117/12.2306503⟩. ⟨hal-01974853⟩