Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures

Carolina Cerqueira 1 Jian Yin Qin 2, 3 Huong Dang 1 Abdelhak Djeffal 2 Jean-Christophe Le Breton 4 Michel Hehn 2 Juan-Carlos Rojas-Sanchez 2 Xavier Devaux 2 Stéphane Suire 2 Sylvie Migot 2 Philippe Schieffer 4 Jean-Georges Mussot 2 Piotr Łaczkowski 1 Abdelmadjid Anane 1 Sébastien Petit-Watelot 2 Mathieu Stoffel 2 Stéphane Mangin 2 Zhi Liu 3 Bu Wen Cheng 3 Xiu Feng Han 3 Henri Jaffrès 1 Jean-Marie George 1 Yuan Lu 2
1 UMP CNRS/THALES - Unité mixte de physique CNRS/Thalès
2 IJL - Institut Jean Lamour
3 University of Chinese Academy of Sciences [Beijing]
4 IPR - Institut de Physique de Rennes
Abstract : Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bonding technique, we have successfully fabricated metal–semiconductor–metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2 μm in n-type Si at room temperature. In those experiments, a pure propagating spin current is generated via ferromagnetic resonance spin pumping and converted into a measurable voltage by using the inverse spin Hall effect occurring in the top Pt layer. A systematic study varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO–Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO–Si interface states appears to be a prerequisite to establishing the necessary out-of-equilibrium spin population in Si under the spin-pumping action.
Type de document :
Article dans une revue
Nano Letters, American Chemical Society, 2019, 19 (1), pp.90-99. 〈10.1021/acs.nanolett.8b03386〉
Liste complète des métadonnées
https://hal-univ-rennes1.archives-ouvertes.fr/hal-01987996
Contributeur : Laurent Jonchère <>
Soumis le : lundi 21 janvier 2019 - 14:37:36
Dernière modification le : jeudi 7 février 2019 - 17:04:33

Identifiants

Données associées

Collections

IPR-MN | IPR | UNIV-LORRAINE | INC-CNRS | LUE-UL | OSUR | IJL-UL | UNIV-RENNES | UR1-UFR-SPM

Citation

Carolina Cerqueira, Jian Yin Qin, Huong Dang, Abdelhak Djeffal, Jean-Christophe Le Breton, et al.. Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures. Nano Letters, American Chemical Society, 2019, 19 (1), pp.90-99. 〈10.1021/acs.nanolett.8b03386〉. 〈hal-01987996〉

Exporter

BibTeX TEI DC DCterms EndNote

Partager

Métriques

Consultations de la notice

18