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Journal articles
Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures
Carolina Cerqueira
1, 2
Jian Yin Qin
3, 4
Huong Dang
1
Abdelhak Djeffal
3
Jean-Christophe Le Breton
5
Michel Hehn
3
Juan-Carlos Rojas-Sanchez
3
Xavier Devaux
3
Stéphane Suire
3
Sylvie Migot
3
Philippe Schieffer
5
Jean-Georges Mussot
3
Piotr Łaczkowski
1
Abdelmadjid Anane
1
Sébastien Petit-Watelot
3
Mathieu Stoffel
3
Stéphane Mangin
3
Zhi Liu
4
Bu Wen Cheng
4
Xiu Feng Han
4
Henri Jaffrès
1
Jean-Marie George
1
Yuan Lu
3
Carolina Cerqueira 1, 2
Author
Jian Yin Qin 3, 4
Author
Huong Dang 1
Author
Abdelhak Djeffal 3
Author
Jean-Christophe Le Breton 5
Mail :
Author IdHAL : jean-christophe-le-breton ORCID : https://orcid.org/0000-0002-2619-0231 ResearcherId : http://www.researcherid.com/rid/B-9964-2017
Michel Hehn 3
Mail :
Author Employer institution : Université de Lorraine IdHAL : michel-hehn ORCID : https://orcid.org/0000-0002-4240-5925
Juan-Carlos Rojas-Sanchez 3
Mail :
Author IdHAL : juan-carlos-rojas-sanchez ResearcherId : http://www.researcherid.com/rid/N-9963-2015 IdRef : https://www.idref.fr/224501712 ORCID : https://orcid.org/0000-0001-7044-2785
Xavier Devaux 3
Mail :
Author IdHAL : xavier-devaux ORCID : https://orcid.org/0000-0001-5694-464X
Stéphane Suire 3
Author
Sylvie Migot 3
Author
Philippe Schieffer 5
Mail :
Author IdHAL : philippe-schieffer ORCID : https://orcid.org/0000-0001-5902-6553
Jean-Georges Mussot 3
Author
Piotr Łaczkowski 1
Author
Abdelmadjid Anane 1
Author
Sébastien Petit-Watelot 3
Mail :
Author IdHAL : sebastien-petit-watelot ORCID : https://orcid.org/0000-0002-0697-8929
Mathieu Stoffel 3
Author
Stéphane Mangin 3
Mail :
Author IdHAL : stephane-mangin ResearcherId : https://publons.com/researcher/3006808/stephane-mangin ORCID : https://orcid.org/0000-0001-6046-0437
Zhi Liu 4
Mail :
Author Employer institution : Shanghai University
Bu Wen Cheng 4
Author
Xiu Feng Han 4
Author
1
UMPhy CNRS/THALES - Unité mixte de physique CNRS/Thales ( 1 avenue Augustin Fresnel, 91767 Palaiseau Cedex, France - France)
- THALES (France)
- CNRS - Centre National de la Recherche Scientifique : UMR137 (France)
2
LSI - Laboratoire des Solides Irradiés (Route de Saclay, F-91128 Palaiseau Cedex - France)
- X - École polytechnique (École polytechnique, 91128 Palaiseau Cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR7642 (France)
- Université Paris-Saclay (Espace Technologique, Bat. Discovery - RD 128 - 2e ét., 91190 Saint-Aubin - France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DRF/IRAMIS (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
3
IJL - Institut Jean Lamour (Institut Jean Lamour - CNRS - Université de Lorraine. Campus Artem 2 allée André Guinier BP 50840 54011 Nancy Cedex - France)
- UL - Université de Lorraine (34 cours Léopold - CS 25233 - 54052 Nancy cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR7198 (France)
4
UCAS - University of Chinese Academy of Sciences [Beijing] (No.19(A) Yuquan Road, Shijingshan District, Beijing, P.R.China 100049 - China)
5
IPR - Institut de Physique de Rennes (Bâtiment 11A , B, C, E – 10B
263 av. Général Leclerc
35042 Rennes cedex FRANCE - France)
- UR1 - Université de Rennes 1 (2 rue du Thabor - CS 46510 - 35065 Rennes cedex - France)
- UNIV-RENNES - Université de Rennes (France)
- CNRS - Centre National de la Recherche Scientifique : UMR6251 (France)
Abstract : Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bonding technique, we have successfully fabricated metal–semiconductor–metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2 μm in n-type Si at room temperature. In those experiments, a pure propagating spin current is generated via ferromagnetic resonance spin pumping and converted into a measurable voltage by using the inverse spin Hall effect occurring in the top Pt layer. A systematic study varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO–Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO–Si interface states appears to be a prerequisite to establishing the necessary out-of-equilibrium spin population in Si under the spin-pumping action.
Document type :
Journal articles
Domain :
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01987996
Contributor : Laurent Jonchère <>
Submitted on : Monday, January 21, 2019 - 2:37:36 PM
Last modification on : Wednesday, June 3, 2020 - 10:30:04 AM
Contributor : Laurent Jonchère <>
Submitted on : Monday, January 21, 2019 - 2:37:36 PM
Last modification on : Wednesday, June 3, 2020 - 10:30:04 AM
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- HAL Id : hal-01987996, version 1
- PUBMED : 30472859
- DOI : 10.1021/acs.nanolett.8b03386
Collections
UNIV-RENNES1 | CNRS | IPR-MN | IPR | UNIV-LORRAINE | INC-CNRS | LUE-UL | OSUR | IJL-UL | UNIV-RENNES | UR1-UFR-SPM | IMPACT-N4S | X-DEP-PHYS | DSM-IRAMIS | X-LSI | CEA | CEA-UPSAY | X | CEA-DRF | UNIV-PARIS-SACLAY | IJL-SPIN
Citation
Carolina Cerqueira, Jian Yin Qin, Huong Dang, Abdelhak Djeffal, Jean-Christophe Le Breton, et al.. Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures. Nano Letters, American Chemical Society, 2019, 19 (1), pp.90-99. ⟨10.1021/acs.nanolett.8b03386⟩. ⟨hal-01987996⟩
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