Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures

Carolina Cerqueira 1, 2 Jian Yin Qin 3, 4 Huong Dang 1 Abdelhak Djeffal 3 Jean-Christophe Le Breton 5 Michel Hehn 3 Juan-Carlos Rojas-Sanchez 3 Xavier Devaux 3 Stéphane Suire 3 Sylvie Migot 3 Philippe Schieffer 5 Jean-Georges Mussot 3 Piotr Łaczkowski 1 Abdelmadjid Anane 1 Sébastien Petit-Watelot 3 Mathieu Stoffel 3 Stéphane Mangin 3 Zhi Liu 4 Bu Wen Cheng 4 Xiu Feng Han 4 Henri Jaffrès 1 Jean-Marie George 1 Yuan Lu 3
1 UMP CNRS/THALES - Unité mixte de physique CNRS/Thalès
2 LSI - Laboratoire des Solides Irradiés
3 IJL - Institut Jean Lamour
4 UCAS - University of Chinese Academy of Sciences [Beijing]
5 IPR - Institut de Physique de Rennes
Abstract : Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bonding technique, we have successfully fabricated metal–semiconductor–metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2 μm in n-type Si at room temperature. In those experiments, a pure propagating spin current is generated via ferromagnetic resonance spin pumping and converted into a measurable voltage by using the inverse spin Hall effect occurring in the top Pt layer. A systematic study varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO–Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO–Si interface states appears to be a prerequisite to establishing the necessary out-of-equilibrium spin population in Si under the spin-pumping action.
Keywords : Spin pumping inverse spin Hall effect localized electronic states spin current wafer bonding
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Journal articles
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01987996
Contributor : Laurent Jonchère <>
Submitted on : Monday, January 21, 2019 - 2:37:36 PM
Last modification on : Tuesday, October 22, 2019 - 4:12:02 PM

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UNIV-RENNES1 | IPR-MN | IPR | UNIV-LORRAINE | INC-CNRS | LUE-UL | OSUR | IJL-UL | UNIV-RENNES | UR1-UFR-SPM | IMPACT-N4S | X-DEP-PHYS | DSM-IRAMIS | X-LSI | CEA | CEA-UPSAY | X | CEA-DRF | UNIV-PARIS-SACLAY

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Carolina Cerqueira, Jian Yin Qin, Huong Dang, Abdelhak Djeffal, Jean-Christophe Le Breton, et al.. Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures. Nano Letters, American Chemical Society, 2019, 19 (1), pp.90-99. ⟨10.1021/acs.nanolett.8b03386⟩. ⟨hal-01987996⟩

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