Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures

Carolina Cerqueira; Jian Yin Qin; Huong Dang; Abdelhak Djeffal; Jean-Christophe Le Breton; Michel Hehn; Juan-Carlos Rojas-Sanchez; Xavier Devaux; Stéphane Suire; Sylvie Migot; Philippe Schieffer; Jean-Georges Mussot; Piotr Łaczkowski; Abdelmadjid Anane; Sébastien Petit-Watelot; Mathieu Stoffel; Stéphane Mangin; Zhi Liu; Bu Wen Cheng; Xiu Feng Han; Henri Jaffrès; Jean-Marie George; Yuan Lu

doi:10.1021/acs.nanolett.8b03386

Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures

Carolina Cerqueira ^{1, 2} Jian Yin Qin ^{3, 4} Huong Dang ¹ Abdelhak Djeffal ³ Jean-Christophe Le Breton ⁵ Michel Hehn ³ Juan-Carlos Rojas-Sanchez ³ Xavier Devaux ³ Stéphane Suire ³ Sylvie Migot ³ Philippe Schieffer ⁵ Jean-Georges Mussot ³ Piotr Łaczkowski ¹ Abdelmadjid Anane ¹ Sébastien Petit-Watelot ³ Mathieu Stoffel ³ Stéphane Mangin ³ Zhi Liu ⁴ Bu Wen Cheng ⁴ Xiu Feng Han ⁴ Henri Jaffrès ¹ Jean-Marie George ¹ Yuan Lu ³

1 UMP CNRS/THALES - Unité mixte de physique CNRS/Thalès

2 LSI - Laboratoire des Solides Irradiés

3 IJL - Institut Jean Lamour

4 UCAS - University of Chinese Academy of Sciences [Beijing]

5 IPR - Institut de Physique de Rennes

Abstract : Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bonding technique, we have successfully fabricated metal–semiconductor–metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2 μm in n-type Si at room temperature. In those experiments, a pure propagating spin current is generated via ferromagnetic resonance spin pumping and converted into a measurable voltage by using the inverse spin Hall effect occurring in the top Pt layer. A systematic study varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO–Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO–Si interface states appears to be a prerequisite to establishing the necessary out-of-equilibrium spin population in Si under the spin-pumping action.

Keywords : Spin pumping inverse spin Hall effect localized electronic states spin current wafer bonding

Document type :

Journal articles

Domain :

Chemical Sciences

Physics [physics]

Complete list of metadatas

https://hal-univ-rennes1.archives-ouvertes.fr/hal-01987996
Contributor : Laurent Jonchère <>
Submitted on : Monday, January 21, 2019 - 2:37:36 PM
Last modification on : Friday, November 29, 2019 - 3:26:03 PM

Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures

Links full text

Identifiers

Collections

Citation

Export

Metrics

138

Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures

Links full text

Identifiers

Collections

Citation

Export

Share

Metrics

138