Optimization of thermoelectric properties achieved in Cu doped β-In2S3 bulks

Yue-Xing Chen (1) , Fu Li (1) , Wenting Wang (1) , Zhuanghao Zheng (1, 2) , Jingting Luo (1) , Ping Fan (1) , Tsunehiro Takeuchi (3)

1 Shenzhen University [Shenzhen]
2 ISCR - Institut des Sciences Chimiques de Rennes
3 Toyota Technological Institute - Nagoya

β-In2-xCuxS3 (0 ≤ x ≤ 0.40) bulks were prepared by solid-state reaction followed by pulsed current sintering. For x ≤ 0.20, X-ray diffraction indicated the formation of single phase, while the secondary phase, Cu2S, was observed for the samples prepared at x = 0.30 and x = 0.40. The Cu-doping allowed us to optimize the power factor in range of whole measured temperature by reducing the low temperature electrical resistivity. With the significant reduction in lattice thermal conductivity, a maximum ZT of 0.51 at 700 K and an average ZT of 0.31 from 300 to 700 K were obtained for the sample with x = 0.05, which values are 0.3 and 1.2 times higher than that of pristine sample.

Keywords: Thermoelectric; doping effect; thermal conductivity; β-In 2 S 3

Domains: Chemical Sciences

Yue-Xing Chen, Fu Li, Wenting Wang, Zhuanghao Zheng, Jingting Luo, et al.. Optimization of thermoelectric properties achieved in Cu doped β-In2S3 bulks. Journal of Alloys and Compounds, 2019, 782, pp.641-647. ⟨10.1016/j.jallcom.2018.12.138⟩. ⟨hal-01990492⟩