Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation

Georgiana Bulai (1) , Oana Pompilian (2, 3) , Silviu Gurlui (1) , Petr Nemec (4) , Virginie Nazabal (5, 4) , Nicanor Cimpoesu (6) , Bertrand Chazallon (2) , Cristian Focsa (2)

1 Alexandru Ioan Cuza University of Iași [Romania]
2 PhLAM - Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523
3 INFLPR - National Institute for Lasers, Plasma, and Radiation Physics [Magurele-Ilfov]
4 University of Pardubice
5 ISCR - Institut des Sciences Chimiques de Rennes
6 TUIASI - "Gheorghe Asachi" Technical University of Iasi

Keywords: spectroscopic ellipsometry; pulsed laser deposition; chalcogenide thin films; Raman spectroscopy

Domains: Chemical Sciences

Georgiana Bulai, Oana Pompilian, Silviu Gurlui, Petr Nemec, Virginie Nazabal, et al.. Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation. Nanomaterials, 2019, 9 (5), ⟨10.3390/nano9050676⟩. ⟨hal-02150452⟩