Nano structure Ti-doped skutterudite CoSb3 thin films through layer inter-diffusion for enhanced thermoelectric properties

Abstract : Ti-doped CoSb3 thin films were prepared through layer inter-diffusion method and the prepared thin films have unique architecture, containing nano-size grains. According to the Raman analysis, the films have weaker atomic vibration after Ti doping. This nano-structure and the weak atomic vibration can scatter a wide-range spectrum of phonons, resulting the significantly decrease of thermal conductivity. In addition, this material design also leads to a very important improvement of the absolute Seeback coefficient value, which increases from about 50 μVK−1 to over 100 μVK-1. As the result, the maximum ZT value is 0.86 at 523 K for a Ti doped sample, which is six times higher than the un-doped sample and is comparable to the best value for the CoSb3 based thin films. A flexible CoSb3 based thin film thermoelectric generator was also fabricated and shows that the response time of all the touch events is below 1 s. © 2019 Elsevier Ltd
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-02181828
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Submitted on : Friday, July 12, 2019 - 2:04:52 PM
Last modification on : Tuesday, September 17, 2019 - 3:04:08 PM

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G.-X. Liang, Z.-H. Zheng, F. Li, J.-T. Luo, H. Jin, et al.. Nano structure Ti-doped skutterudite CoSb3 thin films through layer inter-diffusion for enhanced thermoelectric properties. Journal of the European Ceramic Society, 2019, ⟨10.1016/j.jeurceramsoc.2019.06.044⟩. ⟨hal-02181828⟩

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