Influence of NaI Additions on the Electrical, Dielectric, and Transport Properties in the GeS2-Ga2S3-NaI Glass System - Archive ouverte HAL Access content directly
Journal Articles Elektrokhimiya / Russian Journal of Electrochemistry Year : 2019

Influence of NaI Additions on the Electrical, Dielectric, and Transport Properties in the GeS2-Ga2S3-NaI Glass System

O. Bosak
  • Function : Correspondent author
  • PersonId : 1053286

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Slovak University of Technology in Bratislava
A. Castro
Institut des Sciences Chimiques de Rennes
V Labas
  • Function : Author
Slovak University of Technology in Bratislava
V Trnovcova
  • Function : Author
P. Kostka
  • Function : Author
Laurent Calvez
Institut des Sciences Chimiques de Rennes
David Le Coq
Institut des Sciences Chimiques de Rennes
M. Kubliha
  • Function : Author
Slovak University of Technology in Bratislava

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Chemical Sciences

Laurent Jonchère  : Connect in order to contact the contributor

https://hal-univ-rennes1.archives-ouvertes.fr/hal-02278391

Submitted on : Wednesday, September 4, 2019-1:17:06 PM

Last modification on : Friday, March 10, 2023-4:18:27 PM

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hal-02278391 , version 1 (04-09-2019)

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O. Bosak, A. Castro, V Labas, V Trnovcova, P. Kostka, et al.. Influence of NaI Additions on the Electrical, Dielectric, and Transport Properties in the GeS2-Ga2S3-NaI Glass System. Elektrokhimiya / Russian Journal of Electrochemistry, 2019, 55 (6), pp.501-509. ⟨10.1134/S1023193519060053⟩. ⟨hal-02278391⟩

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