Physical and electrochemical behaviors of AgX (X = S/I) in a GeS2–Sb2S3 chalcogenide-glass matrix

Baochen Ma; Qing Jiao; Yeting Zhang; Xing Sun; Guoliang Yin; Xianghua Zhang; Hongli Ma; Xueyun Liu; Shixun Dai

doi:10.1016/j.ceramint.2019.11.138

Journal articles

Physical and electrochemical behaviors of AgX (X = S/I) in a GeS2–Sb2S3 chalcogenide-glass matrix

Baochen Ma ¹ Qing Jiao ^{1, *} Yeting Zhang ¹ Xing Sun ¹ Guoliang Yin Xianghua Zhang ² Hongli Ma ² Xueyun Liu ¹ Shixun Dai ¹

* Corresponding author

1 Ningbo University

2 ISCR - Institut des Sciences Chimiques de Rennes

Keywords : Pre-exponential factor Impedance spectroscopy Electrochemical property Chalcogenide glass

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Journal articles

Domain :

Chemical Sciences / Material chemistry

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Last modification on : Tuesday, January 19, 2021 - 9:47:44 AM

Ma et al-2019-Physical and ele...

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