Physical and electrochemical behaviors of AgX (X = S/I) in a GeS2–Sb2S3 chalcogenide-glass matrix

Baochen Ma (1) , Qing Jiao (1) , Yeting Zhang (1) , Xing Sun (1) , Guoliang Yin , Xianghua Zhang (2) , Hongli Ma (2) , Xueyun Liu (1) , Shixun Dai (1)

1 NBU - Ningbo University
2 ISCR - Institut des Sciences Chimiques de Rennes

Mots clés: Impedance spectroscopy; Electrochemical property; Chalcogenide glass; Pre-exponential factor

Domaines: Matériaux

Baochen Ma, Qing Jiao, Yeting Zhang, Xing Sun, Guoliang Yin, et al.. Physical and electrochemical behaviors of AgX (X = S/I) in a GeS2–Sb2S3 chalcogenide-glass matrix. Ceramics International, 2020, 46 (5), pp.6544-6549. ⟨10.1016/j.ceramint.2019.11.138⟩. ⟨hal-02493231⟩