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GaTe-Sb2Te3 thin-films phase change characteristics

Abstract : A radio frequency magnetron co-sputtering technique exploiting GaTe and ${\rm Sb}_2 {\rm Te}_3$SbTe targets was used for the fabrication of Ga-Sb-Te thin films. Prepared layers cover broad region of chemical composition (${\sim}{10.0 {-} 26.3}\,\, {\rm at.}$∼10.0-26.3at. % of Ga, ${\sim}{19.9 {-} 34.4}\,\, {\rm at.}$∼19.9-34.4at. % of Sb) while keeping Te content fairly constant (53.8-55.6 at. % of Te). Upon crystallization induced by annealing, large variations in electrical contrast were found, reaching a sheet resistance ratio of ${{R}_{\rm annealed}}/{{R}_{\rm as - deposited}}\;\sim{2.2} \times {{10}^{ - 8}}$R/R∼2.2×10 for the ${{\rm Ga}_{26.3}}{{\rm Sb}_{19.9}}{{\rm Te}_{53.8}}$GaSbTe layer. Phase transition from the amorphous to crystalline state further leads to huge changes of optical functions demonstrated by optical contrast values up to $|\Delta n| + |\Delta k| = {4.20}$|Δn|+|Δk|=4.20 for ${{\rm Ga}_{26.3}}{{\rm Sb}_{19.9}}{{\rm Te}_{53.8}}$GaSbTe composition.
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Submitted on : Friday, April 17, 2020 - 9:38:40 AM
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M. Bouska, Virginie Nazabal, J. Gutwirth, T. Halenkovic, J. Prikryl, et al.. GaTe-Sb2Te3 thin-films phase change characteristics. Optics Letters, 2020, 45 (5), pp.1067-1070. ⟨10.1364/OL.386779⟩. ⟨hal-02536604⟩



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