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GaTe-Sb2Te3 thin-films phase change characteristics

Abstract : Radio-frequency magnetron co-sputtering technique exploiting GaTe and Sb2Te3 targets was used for the fabrication Ga-Sb-Te thin films. Prepared layers cover broad region of chemical composition (~10.0-26.3 at. % of Ga, ~19.9-34.4 at. % of Sb) while keeping Te content fairly constant (53.8-55.6 at. % of Te). Upon crystallization induced by annealing, large variations in electrical contrast was found, reaching sheet resistance ratio of Rannealed/Ras-deposited ~2.2×10-8 for Ga26.3Sb19.9Te53.8 layer. Phase transition from amorphous to crystalline state further leads to huge changes of optical functions demonstrated by optical contrast values up to |Δn|+|Δk| = 4.20 for Ga26.3Sb19.9Te53.8 composition.
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Submitted on : Friday, April 17, 2020 - 9:38:40 AM
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M. Bouska, Virginie Nazabal, J. Gutwirth, T. Halenkovic, J. Prikryl, et al.. GaTe-Sb2Te3 thin-films phase change characteristics. Optics Letters, Optical Society of America - OSA Publishing, 2020, 45 (5), pp.1067-1070. ⟨10.1364/OL.386779⟩. ⟨hal-02536604⟩



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