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Epitaxial growth of CIGSe layers on GaP/Si(001) pseudo-substrate for tandem CIGSe/Si solar cells

Abstract : In this study, the epitaxial growth of co-evaporated Cu(In,Ga)Se2 films (CIGSe) onto GaP/Si(001) pseudo-substrates, where the GaP thin layer is epitaxially grown by Molecular Beam Epitaxy (MBE), is investigated. Extensive structural characterisation of epi-CIGSe is carried out via X-ray diffraction as well as transmission electron microscopy. Sturdy evidence of an epitaxial growth of CIGSe on (GaP/Si)(001) is observed, with the propagation of twins originating from the GaP/Si interface, through the CIGSe/GaP interface. This work aims at paving the way for future CIGSe/GaP/Si structures for the development of tandem solar cells with a c-Si bottom cell, and a GaP interfacial buffer layer for band edge engineering, allowing for the monolithic epitaxial growth of high quality CIGSe as a thin film top cell absorber.
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https://hal.archives-ouvertes.fr/hal-03361009
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Submitted on : Thursday, August 18, 2022 - 2:30:41 PM
Last modification on : Friday, August 19, 2022 - 8:45:34 AM

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Nicolas Barreau, Olivier Durand, Eugène Bertin, Antoine Létoublon, Charles Cornet, et al.. Epitaxial growth of CIGSe layers on GaP/Si(001) pseudo-substrate for tandem CIGSe/Si solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2021, 233, pp.111385. ⟨10.1016/j.solmat.2021.111385⟩. ⟨hal-03361009⟩

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