Free-Volume Extended Defects in Structurally Modified Ge-Ga-S/Se Glasses

Halyna Klym (1) , Laurent Calvez (2) , Anatoli I. Popov (3)

1 LPNU - National Polytechnic University of Lviv
2 ISCR - Institut des Sciences Chimiques de Rennes
3 LU - University of Latvia

Herein, transformation of free-volume extended defects in selected chalcogenide glasses caused by thermal annealing for 10, 25, and 50 h is studied. For 80GeSe(2)-20Ga(2)Se(3) as well as for GeS2-Ga2S3 glasses with different GeS2 and Ga2S3 contents (80GeS(2)-20Ga(2)S(3), 82GeS(2)-18Ga(2)S(3), 84GeS(2)-16Ga(2)S(3)), positron annihilation lifetime spectroscopy and Doppler broadening of annihilation radiation methods are applied. By analyzing the positron annihilation lifetime spectra decomposed into two components, it is shown that the observed changes in the second defect-related component for the 80GeSe(2)-20Ga(2)Se(3) glasses confirm the agglomeration of free volumes in the initial stage of annealing (10 h) with further fragmentation (25 h) and shrinkage (50 h). Increased content of Ge-related subsystem in the GeS2-Ga2S3-based glasses results in the agglomeration of free-volume defects in the 82GeS(2)-18Ga(2)S(3) glasses with their further expansion in the 84GeS(2)-16Ga(2)S(3) matrix.

Mots clés: chalcogenide glasses; defect-related free volumes; expansion; positron annihilation; shrinkage

Domaines: Chimie

Halyna Klym, Laurent Calvez, Anatoli I. Popov. Free-Volume Extended Defects in Structurally Modified Ge-Ga-S/Se Glasses. physica status solidi (b), 2022, pp.2100472. ⟨10.1002/pssb.202100472⟩. ⟨hal-03715273⟩