Humidity Sensor Thanks Array of Suspended Gate Field Effect Transistor

Bruno da Silva Rodrigues (1, 2) , Olivier de Sagazan (3) , Anne-Claire Salaün (1) , Samuel Crand (1) , France Le Bihan (1) , Olivier Bonnaud (1) , Tayeb Mohammed-Brahim (3) , N. Morimoto (2)

1 IETR - Institut d'Electronique et de Télécommunications de Rennes
2 LSI
3 IETR - Institut d'Électronique et des Technologies du numéRique

This work deals with a sensor using array of Suspended Gate Field Effect Transistor (SGFET) to measure the relative humidity (%RH). Technics of microtechnology are used to fabricate a polysilicon bridge with a gap de 0,5 μm which acts as transistor gate. Electrical measures have been realized by sampling mode, involving a sensitivity of -5 μA/%. Also the SGFET humidity sensors are very interesting due to the simplicity to polarize and to analyze the output signal.

Domaines: Micro et nanotechnologies/Microélectronique

Bruno da Silva Rodrigues, Olivier de Sagazan, Anne-Claire Salaün, Samuel Crand, France Le Bihan, et al.. Humidity Sensor Thanks Array of Suspended Gate Field Effect Transistor. ECS Transactions, 2010, Vol. 31 (Issue 1), pp.441-448. ⟨hal-00667801⟩