Tuning the Schottky barrier height at MgO/metal interface

Abstract : We present an experimental investigation of the interface electronic structure of thin MgO films epitaxially grown on Ag(001) by x-ray and ultraviolet photoemission spectroscopy as a function of the oxide growth conditions. It is shown that the Schottky barrier height at MgO/metal interface can be tuned over 0.7 eV by a modification of the oxygen partial pressure or the sample temperature. These experimental results are explained in the framework of the extended Schottky-Mott model and the MgO-induced polarization effect by Mg enrichment of the silver surface region.
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Contributor : Muriel Cadieu <>
Submitted on : Thursday, November 28, 2013 - 1:37:40 PM
Last modification on : Wednesday, May 16, 2018 - 11:23:24 AM

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Thomas Jaouen, Guy Jézéquel, Gabriel Delhaye, Bruno Lépine, Pascal Turban, et al.. Tuning the Schottky barrier height at MgO/metal interface. Applied Physics Letters, American Institute of Physics, 2012, 100 (2), pp.022103-022103-3. ⟨10.1063/1.3675859⟩. ⟨hal-00910875⟩

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