Reduced bulk and surface states densities in metal-induced crystallized polycrystalline silicon nanowires

B. Le Borgne; Laurent Pichon; M. Thomas; Anne-Claire Salaün

doi:10.1002/pssa.201600375

Journal articles

Reduced bulk and surface states densities in metal-induced crystallized polycrystalline silicon nanowires

B. Le Borgne ¹ Laurent Pichon ¹ M. Thomas ¹ Anne-Claire Salaün ¹

1 IETR - Institut d'Électronique et des Technologies du numéRique

Keywords : trapping states energy-distribution induced lateral crystallization thin-film transistors field-effect transistors grain-boundaries electrical-properties si conductance performance

Document type :

Journal articles

Domain :

Computer Science [cs] / Networking and Internet Architecture [cs.NI]

Engineering Sciences [physics] / Electronics

Complete list of metadatas

https://hal-univ-rennes1.archives-ouvertes.fr/hal-01413275
Contributor : Laurent Jonchère <>
Submitted on : Friday, December 9, 2016 - 3:43:12 PM
Last modification on : Tuesday, October 6, 2020 - 3:09:47 AM

Reduced bulk and surface states densities in metal-induced crystallized polycrystalline silicon nanowires

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Reduced bulk and surface states densities in metal-induced crystallized polycrystalline silicon nanowires

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