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Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the gate insulator

Keywords : graphene photodetector
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01479180
Contributor : Laurent Jonchère <>
Submitted on : Tuesday, February 28, 2017 - 4:33:55 PM
Last modification on : Tuesday, October 6, 2020 - 3:09:55 AM

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  • HAL Id : hal-01479180, version 1

Citation

Xiang Liu, Emmanuel Jacques, Tayeb Mohammed-Brahim, Wel Lei. Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the gate insulator. 10th International Conference on Sensing Technology (ICST), Nov 2016, Nanjing, PEOPLES R, China. ⟨hal-01479180⟩

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