Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the gate insulator - Archive ouverte HAL Access content directly
Conference Papers Year : 2016

Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the gate insulator

Keywords

photodetector graphene

Domains

Computer Science [cs] Networking and Internet Architecture [cs.NI] Engineering Sciences [physics] Electronics

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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01479180

Submitted on : Tuesday, February 28, 2017-4:33:55 PM

Last modification on : Friday, March 24, 2023-2:53:04 PM

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hal-01479180 , version 1 (28-02-2017)

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  • HAL Id : hal-01479180 , version 1

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Xiang Liu, Emmanuel Jacques, Tayeb Mohammed-Brahim, Wel Lei. Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the gate insulator. 10th International Conference on Sensing Technology (ICST), Nov 2016, Nanjing, PEOPLES R, China. ⟨hal-01479180⟩

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UNIV-NANTES UNIV-RENNES1 CNRS INSA-RENNES IETR CENTRALESUPELEC UR1-MATH-STIC UR1-UFR-ISTIC IETR-MM UNIV-RENNES INSA-GROUPE UR1-MATH-NUM NANTES-UNIVERSITE
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