Role of nitrogen doping at the surface of titanium nitride thin films towards capacitive charge storage enhancement

Abstract : We recently reported an impressive cycling stability (over 20,000 cycles) of titanium nitride (TiN) electrodes with high specific capacitance. It is anticipated that nitrogen (beta-N) doping in the oxidized surface of TiN film plays a crucial role in charge storage mechanism and stability of this material. In this work, we offer an evidence on the effect of beta-N doping on improvement in specific capacitance of vacuum annealed TiN thin films. The annealing of the TiN films leads to the diffusion of the excess beta-N from sub-surface to oxidized TiN film surface without further oxidation of the electrode surface. We demonstrate an increase in the TiN areal capacitance upon an increase in the amount of beta-N dopant. The areal capacitance of the annealed films was enhanced by 3-fold (8.2 mF cm(-2) in K2SO4 aqueous electrolyte) without sacrificing the cycling stability of the electrodes after more than 10,000 consecutive charge/discharge cycles. (C) 2017 Elsevier B.V. All rights reserved.
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Journal of Power Sources, Elsevier, 2017, 359, pp.349-354. 〈10.1016/j.jpowsour.2017.05.074〉
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Contributeur : Laurent Jonchère <>
Soumis le : mardi 24 octobre 2017 - 09:21:10
Dernière modification le : vendredi 27 juillet 2018 - 16:34:02

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A. Achour, M. Chaker, H. Achour, A. Arman, M. Islam, et al.. Role of nitrogen doping at the surface of titanium nitride thin films towards capacitive charge storage enhancement. Journal of Power Sources, Elsevier, 2017, 359, pp.349-354. 〈10.1016/j.jpowsour.2017.05.074〉. 〈hal-01622061〉

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