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Conference papers
Dual-gate and gate-ail-around polycrystalline silicon nanowires field effect transistors Simulation and characterization
Abstract : Polycrystalline silicon nanowires (poly-SiNWs) are synthesized using side wall spacer top-down method and classical photolithography techniques. This low-temperature (≤ 600°C) fabrication process is a low cost and fully compatible with planar complementary metal oxide semiconductor (CMOS) silicon technology. Independent biasing of each gate allows a possible threshold voltage control of the bottom gate transistors (BOT) and top gate transistors (TGT). Moreover, a new gate architecture passing from 2D to 3D, surrounding-gate transistors, called Gate-All-Around (GAA) where the gate circles the nanowire channel, allows a better electrostatic gate control. Numerical modeling of dual-gate structure and simulations are performed to estimate electrons and holes concentrations in the nanowire used as active layer versus applied gate voltages. Electrical performances of top and bottom-gate transistors are analyzed highlighting oxide-semiconducting nanowire interfaces difference in top and bottom gate configurations. Finally, GAA transistors characterization show that top channel conduction dominates when bias is applied on the surrounding gate. © 2018 Electrochemical Society Inc.All rights reserved.
Keywords :
CMOS integrated circuits
Nanowires
Metals
MOS devices
Oxide semiconductors
Polycrystalline materials
Temperature
Polysilicon
Threshold voltage
Thin film transistors
Complementary metal oxide semiconductors
Dual-gate structure
Electrical performance
Electrons and holes
Fabrication process
Semiconducting nanowires
Silicon Technologies
Surrounding gate transistors
Field effect transistors
https://hal-univ-rennes1.archives-ouvertes.fr/hal-02042765
Contributor : Laurent Jonchère <>
Submitted on : Wednesday, February 20, 2019 - 3:36:59 PM
Last modification on : Thursday, December 19, 2019 - 10:55:05 AM
Contributor : Laurent Jonchère <>
Submitted on : Wednesday, February 20, 2019 - 3:36:59 PM
Last modification on : Thursday, December 19, 2019 - 10:55:05 AM