Variable range hopping conduction in N- and P-type in-situ doped polycrystalline silicon nanowires
Résumé
Temperature dependence of electrical properties in N- and P-type in-situ doped polycrystalline silicon nanowires synthesized by the sidewall spacer formation technique has been studied. Experimental analysis has been carried out for a temperature range from 200K to 530K on in-situ doped polycrystalline silicon nanowires with doping level varying from 2×1016 to 9×1018 cm-3. Results show that for N- and P-type doped samples the temperature dependence of the conductivity follows the 3D variable range hopping model due to hopping between localized electronic states near the Fermi level. The corresponding densities of states are determined following exponentials (tail states) distributions associated to the statistical shift of the Fermi level.
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...