Polycrystalline silicon nanowires synthesis compatible with CMOS technology for integrated gas sensing applications
Résumé
Polysilicon nanowires are synthesized following a classical top-down approach using conventional UV lithography technique fully compatible with the existing silicon CMOS technology. N- and P-type in-situ doping of these nanowires is controlled over a large range of doping levels and electrical properties of these nanowires are analyzed. Results show that resistivity dependence with the doping level is both related to the nanowires size dependent structural quality and doping specie. Charged gas species (ammonia) sensitivity of these nanowires has also been studied. In addition, feasibility of N- and P-channel polysilicon nanowires transistors is demonstrated.
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