Birhodanines and their sulfur analogues for air-stable n-channel organic transistors

Abstract : A series of thin-film n-channel organic field-effect transistors based on various birhodanines, 3,3'-dialkyl-5,5'-bithiazolidinylidene-2,2'-dione-4,4'-dithiones (OS-R) and their sulfur analogues, 3,3'-dialkyl-5,5'-bithiazolidinylidene-2,4,2',4'-tetrathiones (SS-R) are studied. The SS-R compounds have tilted stacking crystal structures, whereas the OS-R compounds show basically herringbone structures. The alkyl chain R length and the intermolecular S-S interactions influence the molecular packing to realize excellent long-term air stability in the thin-film transistors.
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Article dans une revue
Journal of Materials Chemistry C, Royal Society of Chemistry, 2017, 5 (35), pp.9121-9127. 〈10.1039/c7tc02886e〉
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01614762
Contributeur : Laurent Jonchère <>
Soumis le : mercredi 11 octobre 2017 - 13:59:55
Dernière modification le : vendredi 16 novembre 2018 - 01:36:13

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Kodai Iijima, Yann Le Gal, Toshiki Higashino, Dominique Lorcy, Takehiko Mori. Birhodanines and their sulfur analogues for air-stable n-channel organic transistors. Journal of Materials Chemistry C, Royal Society of Chemistry, 2017, 5 (35), pp.9121-9127. 〈10.1039/c7tc02886e〉. 〈hal-01614762〉

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