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Article Dans Une Revue Journal of Materials Chemistry C Année : 2017

Birhodanines and their sulfur analogues for air-stable n-channel organic transistors

Résumé

A series of thin-film n-channel organic field-effect transistors based on various birhodanines, 3,3'-dialkyl-5,5'-bithiazolidinylidene-2,2'-dione-4,4'-dithiones (OS-R) and their sulfur analogues, 3,3'-dialkyl-5,5'-bithiazolidinylidene-2,4,2',4'-tetrathiones (SS-R) are studied. The SS-R compounds have tilted stacking crystal structures, whereas the OS-R compounds show basically herringbone structures. The alkyl chain R length and the intermolecular S-S interactions influence the molecular packing to realize excellent long-term air stability in the thin-film transistors.

Domaines

Chimie
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Dates et versions

hal-01614762 , version 1 (11-10-2017)

Identifiants

Citer

Kodai Iijima, Yann Le Gal, Toshiki Higashino, Dominique Lorcy, Takehiko Mori. Birhodanines and their sulfur analogues for air-stable n-channel organic transistors. Journal of Materials Chemistry C, 2017, 5 (35), pp.9121-9127. ⟨10.1039/c7tc02886e⟩. ⟨hal-01614762⟩
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