The Effect of Bake Temperature on SU-8 Gate Insulator of IGZO Thin Film Transistor

Min-Taek Hong 1 Seung Jae Moon 1 Jong Mo Lee 1 Byung Seong Bae 1 Eui-Jung Yun 1 Maxime Harnois 2 Emmanuel Jacques 2 Tayeb Mohammed-Brahim 2
1 Hoseo Université de Corée du Sud
2 IETR - Institut d'Electronique et de Télécommunications de Rennes
Abstract : SU-8 photoresist was applied to the gate insulator of a-IGZO TFT. The hard bake temperature of SU-8 is important and was varied from 95 to 185 A degrees C. The FTIR showed that hard-bake temperature higher than 125 A degrees C is necessary for complete polymerization. The leakage current and breakdown voltage were improved as increasing hard bake temperatures to 155 A degrees C. However, the crack was generated at 185 A degrees C degrading the electrical characteristics of insulator. The SU-8 insulator was successfully applied to a-IGZO TFT where the on-off ratio was highest for hard-bake temperature of 155 A degrees C.
Keywords : Oxide semiconductor Oxide TFT Low voltage driving Insulator Oxidation response
Document type :
Journal articles
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01879714
Contributor : Laurent Jonchère <>
Submitted on : Monday, September 24, 2018 - 11:18:38 AM
Last modification on : Monday, March 25, 2019 - 11:22:09 AM

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UNIV-RENNES1 | IETR | CNRS | UR1-UFR-ISTIC | IETR-MM | UNIV-NANTES | UNIV-RENNES | INSA-GROUPE

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Min-Taek Hong, Seung Jae Moon, Jong Mo Lee, Byung Seong Bae, Eui-Jung Yun, et al.. The Effect of Bake Temperature on SU-8 Gate Insulator of IGZO Thin Film Transistor. Journal of the Korean Physical Society, Korean physical society, 2018, 73 (3), pp.297-301. ⟨10.3938/jkps.73.297⟩. ⟨hal-01879714⟩

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