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Journal articles
The Effect of Bake Temperature on SU-8 Gate Insulator of IGZO Thin Film Transistor
Abstract : SU-8 photoresist was applied to the gate insulator of a-IGZO TFT. The hard bake temperature of SU-8 is important and was varied from 95 to 185 A degrees C. The FTIR showed that hard-bake temperature higher than 125 A degrees C is necessary for complete polymerization. The leakage current and breakdown voltage were improved as increasing hard bake temperatures to 155 A degrees C. However, the crack was generated at 185 A degrees C degrading the electrical characteristics of insulator. The SU-8 insulator was successfully applied to a-IGZO TFT where the on-off ratio was highest for hard-bake temperature of 155 A degrees C.
https://hal-univ-rennes1.archives-ouvertes.fr/hal-01879714
Contributor : Laurent Jonchère <>
Submitted on : Monday, September 24, 2018 - 11:18:38 AM
Last modification on : Thursday, December 19, 2019 - 10:55:47 AM
Contributor : Laurent Jonchère <>
Submitted on : Monday, September 24, 2018 - 11:18:38 AM
Last modification on : Thursday, December 19, 2019 - 10:55:47 AM